Fabrication of Periodic SiO2 Pattern with High Aspect Ratio on Wafer-Scaled Si Substrate

Yongle Qi,Ruiying Zhang,Bocang Qiu,Yiqun Wang,Shumin Wang
DOI: https://doi.org/10.13494/j.npe.20160036
2016-01-01
Abstract:In this paper, the fabrication of SiO2 patterned Si substrate by stepper lithography, lift-off process and F-based plasma etching was demonstrated, by which the SiO2 trenches with periods of 1. 0μm and 1. 6 μm and aspect ratios of 2. 3 and 1. 4 were uniformly formed on a 6 in(15. 24 cm) Si sub-strate. Especially, the opening window for the pattern with period of 1. 0μm was shortened to 330 nm by over-exposure and Al film lift-off, which was beyond the limit of the stepper lithography used in the ex-periment. After further treatment by HF and KOH solutions, the smooth high-aspect-ratio SiO2 trenches were uniformly formed on V-grooved Si substrate, which makes the substrate suitable for theⅢ-Ⅴsemi-conductor through aspect-ratio-trapping technology. Such wafer-scaled uniform fabrication technology can promote the development of patterned Si substrates and Ⅲ-Ⅴ semiconductor hetero-epitaxy on them.
What problem does this paper attempt to address?