Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

High-resolution Alpha-Particle Spectrometry Based on 4H Silicon Carbide Semiconductor Detectors

Study on 4H-SiC Schottky Diode Alpha-particle Detector

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

Comparison of Radiation Detection Performance of Silicon Carbide and Silicon Detector

Properties Measurement of Silicon Carbide Detector

Study of the characteristics of an irradiated 4H-SiC charge particle detector

Electrical and Spectroscopic Properties of SiC Detectors

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm²

Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments

Development of High Performance PIN-Silicon Detector and Its Application in Radioactive Beam Physical Experiment

Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template*

Improved Performance of SiC Radiation Detector Based on Metal–insulator–semiconductor Structures

Low-Voltage p-i-n GaN-Based Alpha-Particle Detector With High Energy Resolution

A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

The fast neutron response of 4H silicon carbide semiconductor radiation detectors

Improved Performance of SiC Radiation Detectors Due to Optimized Ohmic Contact Electrode by Graphene Insertion

Transient Behaviour Analysis in Silicon Carbide Alpha Particle Detector Using TCAD and SRIM Simulation

Design and simulation of a novel 4H-SiC LGAD timing device