Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

Improved Performance of SiC Radiation Detectors Due to Optimized Ohmic Contact Electrode by Graphene Insertion

Improved Performance of SiC Radiation Detector Based on Metal–insulator–semiconductor Structures

Position-resolved charge collection of silicon carbide detectors with an epitaxially-grown graphene layer

Performance Improvement of Graphene/Silicon Photodetectors Using High Work Function Metal Nanoparticles with Plasma Effect

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Enhancing the Radiation Hardness of Vertical 4H-Sic Detectors by the Metal-Oxide-semiconductor Structure

First use of silicon carbide detectors with graphene-enhanced contacts for medical dosimetry

Effect of Au/Ni/4H–SiC Schottky Junction Thermal Stability on Performance of Alpha Particle Detection

Enhancing the Photoelectrical Performance of Graphene/4h-Sic/graphene Detector by Tuning a Schottky Barrier by Bias

Characterisation of SiC radiation detector technologies with synchrotron X-rays

Study on 4H-SiC Schottky Diode Alpha-particle Detector

Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

Tunable Responsivity in High-Performance SiC/graphene UV Photodetectors Through Interfacial Quantum States by Bias Regulation

A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure

Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template*

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

Monte Carlo Analysis of Silicon Carbide Neutron Detector With Double Conversion Layer

Effects of annealing on the performance of 4H-SiC metal–semiconductor–metal ultraviolet photodetectors

Study of the characteristics of an irradiated 4H-SiC charge particle detector