Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

Effect of Au/Ni/4H–SiC Schottky Junction Thermal Stability on Performance of Alpha Particle Detection

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

Improved Performance of SiC Radiation Detectors Due to Optimized Ohmic Contact Electrode by Graphene Insertion

Effects of annealing on the performance of 4H-SiC metal–semiconductor–metal ultraviolet photodetectors

Effects of Annealing Temperature on the Characteristics of Au/Ti/4H-SiC Schottky Contact

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm²

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

Effects of the Annealing Temperature on Ni Silicide/n-Si(100) Schottky Contacts

Study on 4H-SiC Schottky Diode Alpha-particle Detector

Effect of low-temperature rapid annealing on structural and electrical properties of electroless platinum contacts on CdZnTe detectors

Study of the characteristics of an irradiated 4H-SiC charge particle detector

The Effect Of Annealing Temperature On Electrical Properties Of Au/N-Gasb Schottky Contacts

Semiconductor neutron detector for harsh radiation applications

Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts*

Investigation of thermal annealing on the characteristics of Sc Al1−N thin films

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Neutron irradiation and polarization effect of 4H-SiC Schottky detector

Thermal neutron response of neutron detector based on SiC

Thermal Effects in Ion Irradiated Ti2AlC and Ti3SiC2

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition