Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

Study on 4H-SiC Schottky Diode Alpha-particle Detector

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

High-resolution Alpha-Particle Spectrometry Based on 4H Silicon Carbide Semiconductor Detectors

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm²

Study of the characteristics of an irradiated 4H-SiC charge particle detector

Large-area Vertical Schottky Barrier Diodes Based on 4H-Sic Epilayers: Temperature-dependent Electrical Characteristics

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

Comparative Study of SiC Microstructure Neutron Detectors

Neutron Detector Based on 4H-Sic Schottky Diode

The Performance of 4h–sic Detector at High Temperature after Gamma Irradiation

Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection.

Performance of a 4H-Sic Schottky Diode As a Compact Sized Detector for Neutron Pulse Form Measurements

Thermal neutron response of neutron detector based on SiC

Properties Measurement of Silicon Carbide Detector

Study on 4H-Sic Trench Schottky Type Neutron Detector

Electrical and Spectroscopic Properties of SiC Detectors

Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments

A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure

Comparison of Radiation Detection Performance of Silicon Carbide and Silicon Detector

Enhancing the Radiation Hardness of Vertical 4H-Sic Detectors by the Metal-Oxide-semiconductor Structure