Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

Performance of a 4H-Sic Schottky Diode As a Compact Sized Detector for Neutron Pulse Form Measurements

Investigation of the Performance Degradation of 4H-SiC Neutron Detectors Using MCNP and TCAD

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm²

A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

The fast neutron response of 4H silicon carbide semiconductor radiation detectors

Development of a silicon carbide radiation detection system and experimentation of the system performance

Silicon carbide diodes for neutron detection

Neutron irradiation and polarization effect of 4H-SiC Schottky detector

Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments

Radiation hardness of self-powered Si/SiC heterojunction detector under neutron irradiation

Timing Performance Simulation for 3D 4H-SiC Detector

A Compact Dual Gamma Neutron Detector Based on NaI(Tl+Li) Scintillator Readout with SiPM

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

Monte Carlo Analysis of Silicon Carbide Neutron Detector With Double Conversion Layer

Scintillation detectors constructed with an optimized 2x2 silicon photomultiplier array

A Review of the Effects of Fast-Neutron Irradiation on the Performance of 4H-SiC Schottky Barrier Detectors

A sealed ceramic GEM-based neutron detector

Characteristics of Fabricated Neutron Detectors Based on a SiC Semiconductor

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

Simultaneous measurements for fast neutron flux and tritium production rate using pulse shape discrimination and single crystal CVD diamond detector