Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

Progress in the Research and Development of SGOI Virtual Substrate: A New Si-Based Microelectronic Material

Progress in Research on Wide Band-Gap Semiconductor SiC and Its Application

Research Progress in Ge-based Advanced Field Effect Transistor Technology

SOI High Voltage Device and SPIC Technology

Progress in Research on Silicon-on-insulator Optical Waveguide Switch

Si- and Ge-Based Electronic Devices

SOI (Silicon on Insulator) based integrated optoelectronics

SOI-based Optoelectronic Devices

New Materials for Post-Si Computing: Ge and GeSn Devices

Study of Silicon-on-glass Waveguides

Advancing in Research of One-dimensional Silicon Nano-materials

Goi Improvement in 65nm Sacrificial Oxide Free Process Integration

Growth of Ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Research Progresses of SOI Optical Waveguide Devices and Integrated Optical Switch Matrix

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Ge-on-insulator fabrication based on Ge-on-nothing technology

Study on self-aligned silicide CMOS/SOI technology

Application of SOI materials in optoelectronics

Some Material Structural Properties of SOI Substrates Produced by SDB Technology

Progress in Study of Si-based Group IV Optoelectronic Devices (I)——lasers