In-memory Computing with Ferroelectrics

Rui Yang

DOI: https://doi.org/10.1038/s41928-020-0411-2

IF: 33.255

2020-01-01

Nature Electronics

Abstract:Non-linear ferroelectric tunnel junctions could be used to create low-power in-memory computing systems.

What problem does this paper attempt to address?

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

Qingrong Huang,Dayane Reis,Chao Li,Di Gao,Michael Niemier,Xiaobo Sharon Hu,Mohsen Imani,Xunzhao Yin,Cheng Zhuo

DOI: https://doi.org/10.1109/MDAT.2021.3063336

2022-01-01

Abstract:The article presents computing-in-memory designs using ferroelectric field-effect transistors. Thanks to good support for various key logic operations, these designs can be used for multiple learning tasks/paradigms, from classical machine learning to hyperdimensional computing, and achieve both compactness and efficiency.
Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

Xueqing Li,Longqiang Lai

DOI: https://doi.org/10.1109/isvlsi.2018.00141

2018-01-01

Abstract:Ferroelectric FETs (FeFETs) are emerging as a promising nano device candidate for the next-generation energy-efficient embedded nonvolatile memory (NVM). This promise comes from not only the CMOS-scaling compatibility, but also the compact fusion of logic and non-volatility in a single device that provides opportunities for efficient memory access and in-memory computing. This talk investigates circuit opportunities that harness these intriguing FeFET device features, providing insights into new computation paradigms beyond existing solutions.
Van der Waals Ferroelectric Semiconductor Field Effect Transistor for In-Memory Computing

Junyi Liao,Wen Wen,Juanxia Wu,Yaming Zhou,Sabir Hussain,Haowen Hu,Jiawei Li,Adeel Liaqat,Hongwei Zhu,Liying Jiao,Qiang Zheng,Liming Xie

DOI: https://doi.org/10.1021/acsnano.3c01198

IF: 17.1

2023-03-14

ACS Nano

Abstract:In-memory computing is a highly efficient approach for breaking the bottleneck of von Neumann architectures, i.e., reducing redundant latency and energy consumption during the data transfer between the physically separated memory and processing units. Herein we have designed a in-memory computing device, a van der Waals ferroelectric semiconductor (InSe) based metal-oxide-ferroelectric semiconductor field-effect transistor (MOfeS-FET). This MOfeS-FET integrates memory and logic functions in the...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Ferroelectric materials for neuroinspired computing applications

Dong Wang,Shenglan Hao,Brahim Dkhil,Bobo Tian,Chungang Duan

DOI: https://doi.org/10.1016/j.fmre.2023.04.013

2023-05-19

Abstract:In recent years, the emergence of numerous applications of artificial intelligence (AI) has sparked a new technological revolution. These applications include facial recognition, autonomous driving, intelligent robotics, and image restoration. However, the data processing and storage procedures in the conventional von Neumann architecture are discrete, which leads to the "memory wall" problem. As a result, such architecture is incompatible with AI requirements for efficient and sustainable processing. Exploring new computing architectures and material bases is therefore imperative. Inspired by neurobiological systems, in-memory and in-sensor computing techniques provide a new means of overcoming the limitations inherent in the von Neumann architecture. The basis of neural morphological computation is a crossbar array of high-density, high-efficiency non-volatile memory devices. Among the numerous candidate memory devices, ferroelectric memory devices with non-volatile polarization states, low power consumption and strong endurance are expected to be ideal candidates for neuromorphic computing. Further research on the complementary metal-oxide-semiconductor (CMOS) compatibility for these devices is underway and has yielded favorable results. Herein, we first introduce the development of ferroelectric materials as well as their mechanisms of polarization reversal and detail the applications of ferroelectric synaptic devices in artificial neural networks. Subsequently, we introduce the latest developments in ferroelectrics-based in-memory and in-sensor computing. Finally, we review recent works on hafnium-based ferroelectric memory devices with CMOS process compatibility and give a perspective for future developments.
Nonvolatile Ferroelectric Field-Effect Transistors.

Xiaojie Chai,Jun Jiang,Qinghua Zhang,Xu Hou,Fanqi Meng,Jie Wang,Lin Gu,David Wei Zhang,An Quan Jiang

DOI: https://doi.org/10.1038/s41467-020-16623-9

IF: 16.6

2020-01-01

Nature Communications

Abstract:Future data-intensive applications will have integrated circuit architectures combining energy-efficient transistors, high-density data storage and electro-optic sensing arrays in a single chip to perform in situ processing of captured data. The costly dense wire connections in 3D integrated circuits and in conventional packaging and chip-stacking solutions could affect data communication bandwidths, data storage densities, and optical transmission efficiency. Here we investigated all-ferroelectric nonvolatile LiNbO3 transistors to function through redirection of conducting domain walls between the drain, gate and source electrodes. The transistor operates as a single-pole, double-throw digital switch with complementary on/off source and gate currents controlled using either the gate or source voltages. The conceived device exhibits high wall current density and abrupt off-and-on state switching without subthreshold swing, enabling nonvolatile memory-and-sensor-in-logic and logic-in-memory-and-sensor capabilities with superior energy efficiency, ultrafast operation/communication speeds, and high logic/storage densities.
Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing

Guangjian Wu,Xumeng Zhang,Guangdi Feng,Jingli Wang,Keji Zhou,Jinhua Zeng,Danian Dong,Fangduo Zhu,Chenkai Yang,Xiaoming Zhao,Danni Gong,Mengru Zhang,Bobo Tian,Chungang Duan,Qi Liu,Jianlu Wang,Junhao Chu,Ming Liu

DOI: https://doi.org/10.1038/s41563-023-01676-0

IF: 41.2

2023-09-29

Nature Materials

Abstract:Recently, the increasing demand for data-centric applications is driving the elimination of image sensing, memory and computing unit interface, thus promising for latency- and energy-strict applications. Although dedicated electronic hardware has inspired the development of in-memory computing and in-sensor computing, folding the entire signal chain into one device remains challenging. Here an in-memory sensing and computing architecture is demonstrated using ferroelectric-defined reconfigurable two-dimensional photodiode arrays. High-level cognitive computing is realized based on the multiplications of light power and photoresponsivity through the photocurrent generation process and Kirchhoff's law. The weight is stored and programmed locally by the ferroelectric domains, enabling 51 (>5 bit) distinguishable weight states with linear, symmetric and reversible manipulation characteristics. Image recognition can be performed without any external memory and computing units. The three-in-one paradigm, integrating high-level computing, weight memorization and high-performance sensing, paves the way for a computing architecture with low energy consumption, low latency and reduced hardware overhead.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Emerging 2D Ferroelectric Devices for In‐Sensor and In‐Memory Computing

Chunsheng Chen,Yaoqiang Zhou,Lei Tong,Yue Pang,Jianbin Xu

DOI: https://doi.org/10.1002/adma.202400332

IF: 29.4

2024-05-14

Advanced Materials

Abstract:The quantity of sensor nodes within current computing systems is rapidly increasing in tandem with the sensing data. The presence of a bottleneck in data transmission between the sensors, computing, and memory units obstructs the system's efficiency and speed. To minimize the latency of data transmission between units, novel in‐memory and in‐sensor computing architectures are proposed as alternatives to the conventional von Neumann architecture, aiming for data‐intensive sensing and computing applications. The integration of two‐dimensional (2D) materials and 2D ferroelectric materials has been expected to build these novel sensing and computing architectures due to the dangling‐bond‐free surface, ultra‐fast polarization flipping and ultra‐low power consumption of the 2D ferroelectrics. Here, we review the recent progress of 2D ferroelectric devices for in‐sensing and in‐memory neuromorphic computing. Experimental and theoretical progresses on 2D ferroelectric devices, including passive ferroelectrics‐integrated 2D devices and active ferroelectrics‐integrated 2D devices, are reviewed followed by the integration of perception, memory, and computing application. Notably, 2D ferroelectric devices have been used to simulate synaptic weights, neuronal model functions, and neural networks for image processing. As an emerging device configuration, 2D ferroelectric devices have the potential to expand into the sensor‐memory and computing integration application field, leading to new possibilities for modern electronics. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Shuiyuan Wang,Lan Liu,Lurong Gan,Huawei Chen,Xiang Hou,Yi Ding,Shunli Ma,David Wei Zhang,Peng Zhou

DOI: https://doi.org/10.1038/s41467-020-20257-2

IF: 16.6

2021-01-04

Nature Communications

Abstract:Abstract With the advent of the big data era, applications are more data-centric and energy efficiency issues caused by frequent data interactions, due to the physical separation of memory and computing, will become increasingly severe. Emerging technologies have been proposed to perform analog computing with memory to address the dilemma. Ferroelectric memory has become a promising technology due to field-driven fast switching and non-destructive readout, but endurance and miniaturization are limited. Here, we demonstrate the α-In 2 Se 3 ferroelectric semiconductor channel device that integrates non-volatile memory and neural computation functions. Remarkable performance includes ultra-fast write speed of 40 ns, improved endurance through the internal electric field, flexible adjustment of neural plasticity, ultra-low energy consumption of 234/40 fJ per event for excitation/inhibition, and thermally modulated 94.74% high-precision iris recognition classification simulation. This prototypical demonstration lays the foundation for an integrated memory computing system with high density and energy efficiency.

multidisciplinary sciences
In-Memory Computing Primitive for Sensor Data Fusion in 28 nm HKMG FeFET Technology

M. Jerry,Sourav Dutta,A. K. Saha,Jeffrey A. Smith,S. Datta,S. Gupta,B. Grisafe,Kai Ni,W. Chakraborty

DOI: https://doi.org/10.1109/IEDM.2018.8614527

2018-12-01

Abstract:In this work, we exploit the spatio-temporal switching dynamics of ferroelectric polarization to realize an energy-efficient, and massively-parallel in-memory computational primitive for at-node sensor data fusion and analytics based on an industrial 28nm HKMG FeFET technology [1]. We demonstrate: (i) the spatio-temporal dynamics of polarization switching in HfO2-based ferroelectrics under the stimuli of sub-coercive voltage pulses using experiments and phase-field modeling; (ii) an inherent rectifying conductance accumulation characteristic in FeFET with a large dynamic range of $G_{\max}/G_{\min} > 100$ in the case of 3.0V, 50ns gate pulses; (iii) transition to more abrupt accumulation characteristics due to single/few domain polarization switching in scaled FeFET (34nm LG); and (iv) successful detection of physiological anomalies from realworld multi-modal sensor data streams.

Physics,Engineering,Materials Science
Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications

Zhenhai Li,Tianyu Wang,Jiajie Yu,Jialin Meng,Yongkai Liu,Hao Zhu,Qingqing Sun,David Wei Zhang,Lin Chen

DOI: https://doi.org/10.1002/aelm.202200951

IF: 6.2

2022-10-12

Advanced Electronic Materials

Abstract:Traditional von Neumann architecture is facing severe challenges due to separated physical structure of memory, which inspires the development of in‐memory computing electronics. Intriguingly, HfO2 is widely studied in the semiconductor field, showing great potential in constructing emerging electronics. Here, this work reviews the progress of HfO2 from materials to devices, including crystal structure, first‐principles calculation, and neuromorphic computing application. Traditional von Neumann architecture is facing severe challenges due to separated physical structure of memory and processing units, which inspires the development of in‐memory computing electronics. Intriguingly, as a kind of complementary metal‐oxide‐semiconducor compatible ferroelectric material, HfO2 is widely studied based on first‐principles calculation in the semiconductor field, showing great potential in constructing emerging electronics. Different structures including ferroelectric diode, ferroelectric field effect transistor, and ferroelectric tunnel junctions based on HfO2 are proposed for in‐memory computing application. Here, this work reviews the progress of HfO2 from materials to devices, including crystal structure, fatigue mechanism, first‐principles calculation, and neuromorphic computing application of HfO2‐based device. This work can provide a reference for the HfO2 ferroelectric device development for next‐generation in‐memory computing applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

Qianqian Huang

DOI: https://doi.org/10.1109/ICICDT56182.2022.9933103

2022-01-01

Abstract:Power dissipation is one of the most critical issues for nanoelectronic circuits. For low-power logic applications, Tunnel FET (TFET) and ferroelectric (FE) based negative-capacitance FET (NCFET) can break the fundamental limitation of subthreshold swing in conventional MOSFET. In this talk, from the perspective of mechanism engineering, a new kind of steep-slope device with hybrid operation mechanism is presented with the state-of-the-art comprehensive electric properties, fundamentally addressing the issue of low drive current in conventional TFETs [1-3]. Furthermore, a novel energy-efficient TFET-CMOS hybrid foundry platform based on 300nm CMOS baseline process is also demonstrated for power-constraint AIoT applications [4-5]. For FE-HfO2-based NCFET devices, the possibility of NCFET as a steep-slope device for high-speed and low-voltage operation will be re-assessed based on our proposed dynamic negative capacitance theory [6-7]. Besides, by exploiting the inherent physics of FE polarization switching, this talk will present that ferroelectric-based devices can be utilized for ultralow hardware-cost and high energy-efficient solutions for emerging computing applications. As an example, by utilizing the non-volatile polarization switching dynamics and three-terminal structure of hafnia-based FeFET device, we propose novel Leaky-FeFET based designs to mimic biological neurons [8-9], and a novel FeFET-based time-domain computing in memory system with the record highest area and energy efficiency [10]. By combing the features of FE layer with TFET device, a novel ferroelectric TFET (FeTFET) based content addressable memory cell with only one transistor is proposed and experimentally demonstrated [11], showing its great potential for area- and energy-efficient machine learning applications.
Enabling Lower-Power Charge-Domain Nonvolatile In-Memory Computing with Ferroelectric FETs

Guodong Yin,Yi Cai,Juejian Wu,Zhengyang Duan,Zhenhua Zhu,Yongpan Liu,Yu Wang,Huazhong Yang,Xueqing Li

DOI: https://doi.org/10.48550/arXiv.2102.01442

2021-02-02

Abstract:Compute-in-memory (CiM) is a promising approach to alleviating the memory wall problem for domain-specific applications. Compared to current-domain CiM solutions, charge-domain CiM shows the opportunity for higher energy efficiency and resistance to device variations. However, the area occupation and standby leakage power of existing SRAMbased charge-domain CiM (CD-CiM) are high. This paper proposes the first concept and analysis of CD-CiM using nonvolatile memory (NVM) devices. The design implementation and performance evaluation are based on a proposed 2-transistor-1-capacitor (2T1C) CiM macro using ferroelectric field-effect-transistors (FeFETs), which is free from leakage power and much denser than the SRAM solution. With the supply voltage between 0.45V and 0.90V, operating frequency between 100MHz to 1.0GHz, binary neural network application simulations show over 47%, 60%, and 64% energy consumption reduction from existing SRAM-based CD-CiM, SRAM-based current-domain CiM, and RRAM-based current-domain CiM, respectively. For classifications in MNIST and CIFAR-10 data sets, the proposed FeFETbased CD-CiM achieves an accuracy over 95% and 80%, respectively.

Emerging Technologies
Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

LIU Yong,LI Taixin,ZHU Xi,YANG Huazhong,LI Xueqing

DOI: https://doi.org/10.11999/JEIT230370

2023-01-01

Abstract:Recently, with the development of the Internet of Things and Artificial Intelligence, higher energy efficiency, density, and performance in on-chip memories and intelligent computing are required. Facing the energy efficiency and density bottleneck in conventional CMOS memories and the “memory wall” problem in the von Neumann architecture, emerging NonVolatile Memories (NVMs) such as Ferroelectric Field Effect Transistors (FeFETs) bring new opportunities to solve the challenges. FeFETs have the characteristics of non-volatility, ultra-low power, and high on-off ratio, which are very suitable for memories and Compute-in-Memory (CiM) in high-density, low-power scenarios and would support the implementation of data-intensive applications at the edge. This paper first reviews the development, structure, characteristics, and modeling of FeFETs. Then, the exploration and optimization of FeFET-based memories with different circuit structures and characteristics are discussed. Further, this paper summarizes the FeFET-based CiM circuits, including nonvolatile computing, logic-in-memory, matrix-vector multiplication, and content-addressable memories. Finally, the prospects and challenges of FeFET-based memory and CiM are analyzed.
Integration of ferroelectric devices for advanced in-memory computing concepts

Konrad Seidel,David Lehninger,Ayse Sünbül,Raik Hoffmann,Ricardo Revello,Nandakishor Yadav,Alptekin Vardar,Matthias Landwehr,Andreas Heinig,Hannes Mähne,Kerstin Bernert,Steffen Thiem,Thomas Kämpfe,Maximilian Lederer

DOI: https://doi.org/10.35848/1347-4065/ad3ce2

IF: 1.5

2024-05-09

Japanese Journal of Applied Physics

Abstract:In this work the integration of ferroelectric (FE) devices for advanced in-memory computing applications is demonstrated based on the FeMFET memory cell concept. In contrast to FeFET having the FE layer directly embedded in the gate-stack, the FeMFET consists of a separated ferroelectric capacitor which can be integrated in the chip-interconnect layers. Optimization of the FE material stack under such lower thermal budget constraints will be discussed as well as the significant performance improvement and reduction of variability by application of superlattice FE-stacks and further optimization knobs. The low memory state variability is important for accurate multiply-accumulate (MAC) operation. Such improvements are demonstrated on a memory array test chip including functional verification of MAC operation along a FeMFET-based array column with good accuracy over high dynamic current range.

physics, applied
Nonvolatile Memory Design Based on Ferroelectric FETs.

Sumitha George,Kaisheng Ma,Ahmedullah Aziz,Xueqing Li,Asif Khan,Sayeef Salahuddin,Meng-Fan Chang,Suman Datta,John Sampson,Sumeet Gupta,Vijaykrishnan Narayanan

DOI: https://doi.org/10.1145/2897937.2898050

2016-01-01

Abstract:Ferroelectric FETs (FEFETs) offer intriguing possibilities for the design of low power nonvolatile memories by virtue of their three-terminal structure coupled with the ability of the ferroelectric (FE) material to retain its polarization in the absence of an electric field. Utilizing the distinct features of FEFETs, we propose a 2-transistor (2T) FEFET-based nonvolatile memory with separate read and write paths. With proper co-design at the device, cell and array levels, the proposed design achieves non-destructive read and lower write power at iso-write speed compared to standard FE-RAM. In addition, the FEFET-based memory exhibits high distinguishability with six orders of magnitude difference in the read currents corresponding to the two states. Comparative analysis based on experimentally calibrated models shows significant improvement of access energy-delay. For example, at a fixed write time of 550ps, the write voltage and energy are 58.5% and 67.7% lower than FERAM, respectively. These benefits are achieved with 2.4 times the area overhead. Further exploration of the proposed FEFET memory in energy harvesting nonvolatile processors shows an average improvement of 27% in forward progress over FERAM.
Ultralow-power in-memory computing based on ferroelectric memcapacitor network

Bobo Tian,Zhuozhuang Xie,Luqiu Chen,Shenglan Hao,Yifei Liu,Guangdi Feng,Xuefeng Liu,Hongbo Liu,Jing Yang,Yuanyuan Zhang,Wei Bai,Tie Lin,Hong Shen,Xiangjian Meng,Ni Zhong,Hui Peng,Fangyu Yue,Xiaodong Tang,Jianlu Wang,Qiuxiang Zhu,Yachin Ivry,Brahim Dkhil,Junhao Chu,Chungang Duan

DOI: https://doi.org/10.1002/EXP.20220126

2023-05-11

Abstract:Analog storage through synaptic weights using conductance in resistive neuromorphic systems and devices inevitably generates harmful heat dissipation. This thermal issue not only limits the energy efficiency but also hampers the very-large-scale and highly complicated hardware integration as in the human brain. Here we demonstrate that the synaptic weights can be simulated by reconfigurable non-volatile capacitances of a ferroelectric-based memcapacitor with ultralow-power consumption. The as-designed metal/ferroelectric/metal/insulator/semiconductor memcapacitor shows distinct 3-bit capacitance states controlled by the ferroelectric domain dynamics. These robust memcapacitive states exhibit uniform maintenance of more than 104 s and well endurance of 109 cycles. In a wired memcapacitor crossbar network hardware, analog vector-matrix multiplication is successfully implemented to classify 9-pixel images by collecting the sum of displacement currents (I = C × dV/dt) in each column, which intrinsically consumes zero energy in memcapacitors themselves. Our work sheds light on an ultralow-power neural hardware based on ferroelectric memcapacitors.
Sub-nA Low-Current HZO Ferroelectric Tunnel Junction for High-Performance and Accurate Deep Learning Acceleration

Tzu-Yun Wu,Tian-Sheuan Chang,Heng-Yuan Lee,Shyh-Shyuan Sheu,Wei-Chung Lo,Tuo-Hung Hou,Hsin-Hui Huang,Yueh-Hua Chu,Chih-Cheng Chang,Ming-Hung Wu,Chien-Hua Hsu,Chien-Ting Wu,Min-Ci Wu,Wen-Wei Wu

DOI: https://doi.org/10.1109/IEDM19573.2019.8993565

2019-01-01

Abstract:This paper presents a unique opportunity of HZO ferroelectric tunnel junction (FTJ) for in-memory computing. The device operates at an extremely low sub-nA current while simultaneously achieving 50-ns fast switching, > 10 7 cycling endurance, > 10-yr retention, minimal variability, and analog state modulation. We analyze an FTJ-based deep binary neural network. It achieves better accuracy and remarkable 702, 101, and 7×10 4 times improvements in power, area, and energy-area product efficiency compared with those using NVMs with a typical μA cell current designed for fast memory access.
Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

Zheng-Dong Luo,Siqing Zhang,Yan Liu,Dawei Zhang,Xuetao Gan,Jan Seidel,Yang Liu,Genquan Han,Marin Alexe,Yue Hao

DOI: https://doi.org/10.1021/acsnano.2c00079

IF: 17.1

2022-02-11

ACS Nano

Abstract:In-memory computing featuring a radical departure from the von Neumann architecture is promising to substantially reduce the energy and time consumption for data-intensive computation. With the increasing challenges facing silicon complementary metal-oxide-semiconductor (CMOS) technology, developing in-memory computing hardware would require a different platform to deliver significantly enhanced functionalities at the material and device level. Here, we explore a dual-gate two-dimensional ferroelectric field-effect transistor (2D FeFET) as a basic device to form both nonvolatile logic gates and artificial synapses, addressing in-memory computing simultaneously in digital and analog spaces. Through diversifying the electrostatic behaviors in 2D transistors with the dual-ferroelectric-coupling effect, rich logic functionalities including linear (AND, OR) and nonlinear (XNOR) gates were obtained in unipolar (MoS2) and ambipolar (MoTe2) FeFETs. Combining both types of 2D FeFETs in a heterogeneous platform, an important computation circuit, i.e., a half-adder, was successfully constructed with an area-efficient two-transistor structure. Furthermore, with the same device structure, several key synaptic functions are shown at the device level, and an artificial neural network is simulated at the system level, manifesting its potential for neuromorphic computing. These findings highlight the prospects of dual-gate 2D FeFETs for the development of multifunctional in-memory computing hardware capable of both digital and analog computation.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Design of 2t/cell and 3t/cell Nonvolatile Memories with Emerging Ferroelectric FETs.

Xueqing Li,Juejian Wu,Kai Ni,Sumitha George,Kaisheng Ma,John Sampson,Sumeet Kumar Gupta,Yongpan Liu,Huazhong Yang,Suman Datta,Vijaykrishnan Narayanan

DOI: https://doi.org/10.1109/mdat.2019.2902094

2019-01-01

IEEE Design and Test

Abstract:Editor’s note: This article explores the design of high-density, low-power, and high-speed embedded nonvolatile memory arrays exploiting the unique device characteristics of the emerging ferroelectric FETs. —Vivek De, Intel Corporation
A Reconfigurable Ferroelectric Transistor as An Ultra‐Scaled Cell for Low‐Power In‐Memory Data Processing

Zhongyunshen Zhu,Anton E. O. Persson,Lars‐Erik Wernersson

DOI: https://doi.org/10.1002/aelm.202400335

IF: 6.2

2024-08-07

Advanced Electronic Materials

Abstract:A ferroelectric gating tunnel field‐effect transistor with gate/source overlap exhibits non‐volatile reconfigurable anti‐ambipolarity. The vertical gate‐all‐around nanowire architecture combined with unique band‐to‐band tunneling in the device enables ultra‐scaled footprint and low‐power operation. The device can be implemented in crossbar arrays as convolutional frequency filters for in‐memory data processing with area and energy efficiency. Compact in‐memory computing architectures are desirable to embed artificial intelligence (AI) in resource‐restricted edge devices. However, current technologies face limitations in both the area and energy efficiency. Here, a reconfigurable ferroelectric tunnel field‐effect transistor (ferro‐TFET) is presented that can be used as an ultra‐scaled cell for low‐power in‐memory data processing. A gate‐all‐around ferroelectric film is integrated on a vertical nanowire TFET with a gate/source overlapped channel, enabling non‐volatilely reconfigurable anti‐ambipolarity by programming the ferroelectric polarization state. By considering the stored polarization state and reading voltage as inputs, an XNOR operation is achieved in a single‐gate ferro‐TFET. It is shown that the ferro‐TFETs can be implemented in a crossbar array for convolutional frequency filtering whose performance can be evaluated by an impulse‐response method considering the effect of device‐to‐device variation based on statistics. Benefiting from the miniaturized footprint, non‐volatility, and low‐power operation, ferro‐TFETs show promises as a one‐transistor in‐memory computing cell for area‐ and energy‐efficient edge AI applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

In-memory Computing with Ferroelectrics

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

Van der Waals Ferroelectric Semiconductor Field Effect Transistor for In-Memory Computing

Ferroelectric materials for neuroinspired computing applications

Nonvolatile Ferroelectric Field-Effect Transistors.

Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing

Emerging 2D Ferroelectric Devices for In‐Sensor and In‐Memory Computing

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

In-Memory Computing Primitive for Sensor Data Fusion in 28 nm HKMG FeFET Technology

Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications

Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

Enabling Lower-Power Charge-Domain Nonvolatile In-Memory Computing with Ferroelectric FETs

Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

Integration of ferroelectric devices for advanced in-memory computing concepts

Nonvolatile Memory Design Based on Ferroelectric FETs.

Ultralow-power in-memory computing based on ferroelectric memcapacitor network

Sub-nA Low-Current HZO Ferroelectric Tunnel Junction for High-Performance and Accurate Deep Learning Acceleration

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

Design of 2t/cell and 3t/cell Nonvolatile Memories with Emerging Ferroelectric FETs.

A Reconfigurable Ferroelectric Transistor as An Ultra‐Scaled Cell for Low‐Power In‐Memory Data Processing