In-Situ Electronic Transport Measurement As A Tool for Investigating the 2d Doping in Metal-C60 Interfacial Systems

WB ZHAO,J CHEN,K WU,JL ZHANG,CY LI,DL YIN,ZN GU,XH ZHOU,ZX JIN
DOI: https://doi.org/10.1088/0953-8984/6/41/002
1994-01-01
Abstract:The two-dimensional doping by charge transfer and/or diffusion of metal atoms into C60 has been studied by in situ electronic transport measurements during the deposition of metal-C60 ultrathin bilayers. The results show that the transport properties of these interfacial systems are significantly altered by such doping processes. Some useful information about the charge transfer from metal to C60 and the electronic transport properties of the metal-doped-monolayer C60 can be obtained after careful analysis.
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