Abstract:In the last two decades we have assisted to a rush towards finding a 3He-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems from applications like nuclear war-head screening or preventing illicit traffic of radiological materials. Semiconductor detectors stand among the strongest contenders, particularly those based on materials possessing a wide band gap like silicon carbide (SiC). We review the workings of SiC-based neutron detectors, along with several issues related to material properties, device fabrication and testing. The paper summarizes the experimental and theoretical work carried out within the E-SiCure project (Engineering Silicon Carbide for Border and Port Security), co-funded by the NATO Science for Peace and Security Programme. The main goal was the development of technologies to support the fabrication of radiation-hard silicon carbide detectors of special nuclear materials. Among the achievements, we have the development of successful Schottky barrier based detectors and the identification of the main carrier life-time-limiting defects in the SiC active areas, either already present in pristine devices or introduced upon exposure to radiation fields. The physical processes involved in neutron detection are described. Material properties as well as issues related to epitaxial growth and device fabrication are addressed. The presence of defects in as-grown material, as well as those introduced by ionizing radiation are reported. We finally describe several experiments carried out at the Jozef Stefan Institute TRIGA Mark II reactor (Ljubljana, Slovenia), where a set of SiC-based neutron detectors were tested, some of which being equipped with a thermal neutron converter layer. We show that despite the existence of large room for improvement, Schottky barrier diodes based on state-of-the-art 4 H -SiC are closing the gap between gas- and semiconductor-based detectors regarding their sensitivity.

Design of Compensated Thermal Neutron Detector Based on He-3 Tube of SiC Micro-structure

Monte Carlo Analysis of Silicon Carbide Neutron Detector With Double Conversion Layer

3-D thermal and radiation-matter interaction simulations of a SiC solid-state detector for neutron flux measurements in JSI TRIGA Mark II research reactor

A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure

Development of a silicon carbide radiation detection system and experimentation of the system performance

Design of the front-end electronics for linear position-sensitive 3 He neutron detector

Investigation of the Performance Degradation of 4H-SiC Neutron Detectors Using MCNP and TCAD

Development of a silicon-based thermal neutron detection system

Research Progress in Silicon Carbide Neutron Detector

Silicon carbide diodes for neutron detection

Developments of a 2D position sensitive neutron detector

Radiation hardness of self-powered Si/SiC heterojunction detector under neutron irradiation

Design of moderator and collimator based on compact D-T neutron source for neutron imaging

Design of the Thermal Neutron Detection System for CJPL-II

A self-biased neutron detector based on an SiC semiconductor for a harsh environment

Construction of a two-dimensional thermal neutron detector

Development and performance evaluation of a multi-layer boron-lined detector for the CPHS-SANS instrument

Theoretical design of a solid scintillation detector for tritium surface contamination measurement based on CaF 2 (Eu) sheet and self-coincidence technology of MCP-PMT

GAMBE: Thermal neutron detection system based on a sandwich configuration of silicon semiconductor detector coupled with neutron reactive material

Characteristics of Fabricated Neutron Detectors Based on a SiC Semiconductor

Characteristics of 3D Micro-Structured Semiconductor High Efficiency Neutron Detectors