Abstract:The band structures and partial charge densities of armchair MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} with and without stacking fault have been investigated using first-principles calculations. The band gaps of MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} with periodically arranged stacking fault increase with the decreasing of stacking fault density and converge to 0.27 eV, which is smaller than perfect MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} (1.76 eV). For MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} nanoribbons with stacking fault, the band gap increases for ribbon width L≤18\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$L \le 18$$\end{document} and decreases slightly for L≥18.\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$L\ge 18.$$\end{document}The band gaps are smaller than that of MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} nanoribbons without stacking fault. The partial charge densities of armchair MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} nanoribbons with stacking fault are also presented. Results indicate that the defect levels originate from the stacking fault and are located in the forbidden band near the Fermi level. Therefore, the band gaps can be decreased by stacking fault.

Electronic Properties of Armchair MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document}

Electronic Properties of Armchair $$\hbox {mos}_{2}$$mos2 Nanoribbons with Stacking Faults: First-Principles Calculations

Electronic Properties of Armchair MoS_2 Nanoribbons with Stacking Faults: First-Principles Calculations

Effects of Multiple Stacking Faults on the Electronic and Optical Properties of Armchair MoS$$_{2}$$2 Nanoribbons: First-Principles Calculations

Effects of Stone–Wales Defect on the Electronic and Optical Properties of Armchair MoS2 Nanoribbon: First-Principles Calculations

Electronic structures of strained MoS2 nanoribbons

Bandgaps of Monolayer MoS 2 and WS 2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects

Interlayer Coupling Affected Structural Stability in Ultrathin MoS2: an Investigation by High Pressure Raman Spectroscopy

Defects, band bending and ionization rings in MoS2

Electronic Properties of Germanene on Pristine and Defective MoS2 : A First-Principles Study

Stacking Stability of MoS 2 Bilayer: an Ab Initio Study

Band gap engineering of MoS$_2$ upon compression

Unraveling the influence of defects in Janus MoSSe and Janus alloys MoS 2(1− x ) Se 2 x

Direct Observation of Multiple Rotational Stacking Faults Coexisting in Freestanding Bilayer MoS2

Flatbands and Mechanical Deformation Effects in the Moiré Superlattice of MoS_2-WSe_2 Heterobilayers

Point defects in the 1$T'$ and 2$H$ phases of single-layer MoS$_2$: A comparative first-principles study

Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene

Defect modulated electronic structure and magnetism in the 1T ' phase of Janus MoSSe

Novel electronic structures from anomalous stackings in NbS$_2$ and MoS$_2$

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Bandgap Engineering of Monolayer Mos2 under Strain: A Dft Study