Abstract:Two-dimensional (2D) layered materials have attracted tremendous interest from the perspective of basic physics and technological applications in the last decade. Especially, the artificially assembled van der Waals (vdW) heterostructures and twisted 2D materials bring out fascinating properties, and render promising applications possible by engineering the stacking order. Here, based on first-principles calculations, we explored the interplay between stacking effect and electron-electron correlation effects in the layered vdW material of bulk 1T-NbS2 with a 2D charge density wave (CDW) order. Without considering the Coulomb correlation effects, two energetically favorable out-of-plane stacking configurations are identified: one is a metallic phase with a single-layer stacking pattern, another is a band insulator with a paired-bilayer stacking configuration. Even if the Coulomb correlation effects are taken into account, the two energetic favorable stacking orders are still far more stable than other stacking orders. Furthermore, increasing the Coulomb interactions, the paired-bilayer stacking configuration transforms from nonmagnetic band insulator to antiferromagnetic insulator, while the single-layer stacked 1T-NbS2 undergoes a Slater-Mott metal-insulator transition, which indicates the non-negligible role of electron-electron correlation interactions. In addition, the electronic structure and magnetic ground state change drastically among different stacking configurations, providing a platform to tune the electronic structures and interlayer magnetic interactions. In contrast to the widely accepted scenario of Mott localization as the driving force behind the gap formation in the CDW phase of layered transition-metal dichalcogenides, our results not only highlight the crucial role of stacking order in the electronic structures of 1T-NbS2, but also shed fresh light on the distinct effects of Coulomb interactions on different stacking arrangements.

Novel electronic structures from anomalous stackings in NbS$_2$ and MoS$_2$

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Unusual Stacking Variations in Liquid-Phase Exfoliated Transition Metal Dichalcogenides

Stacking order and Coulomb correlation effect in the layered charge density wave phase of 1 T − Nb S 2

Stacking of charge-density waves in 2H-NbSe$_2$ bilayers

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Stable $2R$ van der Waals heterostructures of NbS$_2$ and $M$Se$_2$ for $M$=Mo and W

Monolayer Behavior of NbS2 in Natural Van Der Waals Heterostructures.

Stacking effect and Coulomb correlation in layered charge density wave phase of 1T-NbS2

Two‐Dimensional Layered Heterostructures Synthesized from Core–Shell Nanowires

Transition from three- to two-dimensional Ising superconductivity in few-layer NbSe2 by proximity effect from van der Waals heterostacking

Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS2/Janus MoSSe van der Waals heterostructure

Structure and Electronic Properties of Transition Metal Dichalcogenide Mx2 (M = Mo, W, Nb; X = S, Se) Monolayers with Grain Boundaries

Functional Group Induced Transformations in Stacking and Electron Structure in Mo2CTx/NiS Heterostructures

Functional Group Induced Transformations in Stacking and Electron Structure in Mo 2 CT x /NiS Heterostructures

Emergent layer stacking arrangements in c-axis confined MoTe2

Band alignments, conduction band edges and intralayer bandgap renormalisation in MoSe2/WSe2 heterobilayers

Functional group induced transformations in stacking and electron structure in Mo2CT x/NiS heterostructures

Self-Stacked 1T-1H Layers in 6R-NbSeTe and the Emergence of Charge and Magnetic Correlations Due to Ligand Disorder

Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure