Abstract:The interfacial tunable band alignment of heterostructures is coveted in device design and optimization of device performance. As an intentional approach, alloying allows band engineering and continuous band‐edge tunability for low‐dimensional semiconductors. Thus, combining the tunability of alloying with the band structure of a heterostructure is highly desirable for the improvement of device characteristics. In this work, the single‐step growth of alloy‐to‐alloy (MoS2(1‐x)Se2x/SnS2(1‐y)Se2y) 2D vertical heterostructures is demonstrated. Electron diffraction reveals the well‐aligned heteroepitaxial relationship for the heterostructure, and a near‐atomically sharp and defect‐free boundary along the interface is observed. The nearly intrinsic van der Waals (vdW) interface enables measurement of the intrinsic behaviors of the heterostructures. The optimized type‐II band alignment for the MoS2(1‐x)Se2x/SnS2(1‐y)Se2y heterostructure, along with the large band offset and effective charge transfer, is confirmed through quenched PL spectroscopy combined with density functional theory calculations. Devices based on completely stacked heterostructures show one or two orders enhanced electron mobility and rectification ratio than those of the constituent materials. The realization of device‐quality alloy‐to‐alloy heterostructures provides a new material platform for precisely tuning band alignment and optimizing device applications.

Stable $2R$ van der Waals heterostructures of NbS$_2$ and $M$Se$_2$ for $M$=Mo and W

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Two Step Chemical Vapor Deposition of In2se3/Mose2 Van Der Waals Heterostructures

Tunable Band-Structures of MSe2/C3N (M = Mo and W) Van Der Waals Heterojunctions

Electronic Properties of MTe2/AsI3(M=Mo and W) Van Der Waals Heterostructures

Structure and Electronic Properties of Transition Metal Dichalcogenide Mx2 (M = Mo, W, Nb; X = S, Se) Monolayers with Grain Boundaries

Novel electronic structures from anomalous stackings in NbS$_2$ and MoS$_2$

Superior Electronic Structure in Two-Dimensional MnPSe 3 /mos2 Van Der Waals Heterostructures

Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport

Edge‐Epitaxial Growth of 2D NbS2‐WS2 Lateral Metal‐Semiconductor Heterostructures

Band structures of molecular beam epitaxially grown MoSe<sub>2</sub>-WSe<sub>2</sub> heterobilayers with different stacking orders on SrTiO<sub>3</sub>(111) substrate

Geometric, electronic, and optical properties of MoS 2 /WSSe van der Waals heterojunctions: a first-principles study

Direct Synthesis and Enhanced Rectification of Alloy‐to‐Alloy 2D Type‐II MoS 2(1‐ x ) Se 2 x /SnS 2(1‐ y ) Se 2 y Heterostructures

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

Spin-orbit-proximitized ferromagnetic metal by monolayer transition metal dichalcogenide: Atlas of spectral functions, spin textures and spin-orbit torques in Co/MoSe$_2$, Co/WSe$_2$ and Co/TaSe$_2$ heterostructures

Band structures of molecular beam epitaxially grown MoSe2–WSe2 heterobilayers with different stacking orders on SrTiO3(111) substrate

Stacking of charge-density waves in 2H-NbSe$_2$ bilayers

van der Waals trilayers and superlattices: modification of electronic structures of MoS2 by intercalation