Abstract:Janus materials have attracted much interest due to their intrinsic electric dipole moment and Rashba band splitting. We show that, by building bilayers of MoSeTe and WSeTe with different chalcogen atom sequences and different stacking patterns, one can modulate the net dipole moment strength and the Rashba effect, as well as the band alignment of the MoSeTe/WSeTe bilayer. Type-II band alignment is found which can be exploited to create long-lived interlayer excitons. Moreover, it is shown that the atomic sequence and stacking play pivotal roles in the interlayer distance of MoSeTe/WSeTe and thus its electronic structure and vibrational, especially low-frequency, characteristics. The long-range dispersion forces between atoms are treated with a conventional additive pairwise, as well as a many-body-dispersion method. It is shown that under the many-body dispersion method, more clear and rational thermodynamic trends of bilayer stacking are realized and interface distances are estimated more accurately. Vibrational spectra of the bilayers are calculated using first-principles phonon calculations and the fingerprints of monolayer attraction and repulsion are identified. An anti-correlation between distance and the shearing mode frequency of the rigid monolayers is demonstrated which agrees well with experimental findings. The results suggest that the judicious selection of the atomic sequence and stacking helps to widen the scope of the low-dimensional materials by adding or enhancing properties for specific applications, e.g. for spintronics or valleytronics devices.

Band structures of molecular beam epitaxially grown MoSe<sub>2</sub>-WSe<sub>2</sub> heterobilayers with different stacking orders on SrTiO<sub>3</sub>(111) substrate

Band structures of molecular beam epitaxially grown MoSe2–WSe2 heterobilayers with different stacking orders on SrTiO3(111) substrate

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Formation mechanism of mirror twin grain boundaries in molecular beam epitaxy grown monolayer WSe2-MoSe2 lateral heterojunctions

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Band alignments, conduction band edges and intralayer bandgap renormalisation in MoSe2/WSe2 heterobilayers

Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures

Molecular-beam Epitaxy of Monolayer and Bilayer WSe 2 : a Scanning Tunneling Microscopy/spectroscopy Study and Deduction of Exciton Binding Energy

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure

Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Band engineering in epitaxial monolayer transition metal dichalcogenides alloy Mo<i><sub>x</sub></i>W<sub>1-<i>x</i></sub>Se<sub>2</sub> thin films

Epitaxial Synthesis of Monolayer PtSe2 Single Crystal on MoSe2 with Strong Interlayer Coupling

Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2.

Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition

Geometric, electronic, and optical properties of MoS 2 /WSSe van der Waals heterojunctions: a first-principles study

The structure and electronic properties of the MoSe<sub>2</sub>/PtS<sub>2</sub> van der Waals heterostructure

First-principles Calculations of MoSeTe/WSeTe Bilayers: Stability, Phonons, Electronic Band Offsets, and Rashba Splitting