Abstract:The band structures and partial charge densities of armchair MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} with and without stacking fault have been investigated using first-principles calculations. The band gaps of MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} with periodically arranged stacking fault increase with the decreasing of stacking fault density and converge to 0.27 eV, which is smaller than perfect MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} (1.76 eV). For MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} nanoribbons with stacking fault, the band gap increases for ribbon width L≤18\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$L \le 18$$\end{document} and decreases slightly for L≥18.\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$L\ge 18.$$\end{document}The band gaps are smaller than that of MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} nanoribbons without stacking fault. The partial charge densities of armchair MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} nanoribbons with stacking fault are also presented. Results indicate that the defect levels originate from the stacking fault and are located in the forbidden band near the Fermi level. Therefore, the band gaps can be decreased by stacking fault.

Effects of Stone–Wales Defect on the Electronic and Optical Properties of Armchair MoS2 Nanoribbon: First-Principles Calculations

Effects of Multiple Stacking Faults on the Electronic and Optical Properties of Armchair MoS$$_{2}$$2 Nanoribbons: First-Principles Calculations

Influence of Stone-Wales defects on the structural and electronic properties of single-walled silicon nanotubes by SCC-DFTB calculations

Electronic Properties of Armchair MoS_2 Nanoribbons with Stacking Faults: First-Principles Calculations

Structure and electrical properties of bilayer zigzag silicene nanoribbons depending on stone-wales and applied electric fields by SCC-DFTB method

Electronic Properties of Armchair $$\hbox {mos}_{2}$$mos2 Nanoribbons with Stacking Faults: First-Principles Calculations

Electronic Properties of Armchair MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document}

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

Effect of SW defect on structural and transport properties of silicene nanoribbons

Electronic and Optical Properties of Zigzag Graphene Nanoribbon with Stone-Wales Defect

Electronic and Magnetic Properties of Zigzag Silicene Nanoribbons with Stone–Wales Defects

Influences of Stone–Wales defects on the structure, stability and electronic properties of antimonene: A first principle study

Defect symmetry influence on electronic transport of zigzag nanoribbons

Effects of Stone-Wales defects on structure and electrical properties of double-walled silicon nanotubes by SCC-DFTB method

The structural and electronic properties of Stone-Wales defective zigzag/armchair antimonene nanotubes: First-principles calculations

Stone-Wales Defects in Silicene: Formation, Stability and Reactivity of Defect Sites

Stiffer Bonding of Armchair Edge in Single‐Layer Molybdenum Disulfide Nanoribbons

Effects of Cell Defects on the Mechanical and Thermal Properties of Carbon Honeycombs

Effect of Doping and Defects on the Electronic Properties of MoS 2 /WSe 2 Bilayer Heterostructure: A First-principles Study

Effects of Various Defects on the Electronic Properties of Single-Walled Carbon Nanotubes: A First Principle Study

Effect of MoSe2 Nanoribbons with NW30 Edge Reconstructions on the Electronic and Catalytic Properties by Strain Engineering