Abstract:The band structures and partial charge densities of armchair MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} with and without stacking fault have been investigated using first-principles calculations. The band gaps of MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} with periodically arranged stacking fault increase with the decreasing of stacking fault density and converge to 0.27 eV, which is smaller than perfect MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} (1.76 eV). For MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} nanoribbons with stacking fault, the band gap increases for ribbon width L≤18\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$L \le 18$$\end{document} and decreases slightly for L≥18.\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$L\ge 18.$$\end{document}The band gaps are smaller than that of MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} nanoribbons without stacking fault. The partial charge densities of armchair MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document} nanoribbons with stacking fault are also presented. Results indicate that the defect levels originate from the stacking fault and are located in the forbidden band near the Fermi level. Therefore, the band gaps can be decreased by stacking fault.

Electronic Properties of Armchair $$\hbox {mos}_{2}$$mos2 Nanoribbons with Stacking Faults: First-Principles Calculations

Electronic Properties of Armchair MoS_2 Nanoribbons with Stacking Faults: First-Principles Calculations

Electronic Properties of Armchair MoS2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {MoS}_{2}$$\end{document}

Effects of Multiple Stacking Faults on the Electronic and Optical Properties of Armchair MoS$$_{2}$$2 Nanoribbons: First-Principles Calculations

Effects of Stone–Wales Defect on the Electronic and Optical Properties of Armchair MoS2 Nanoribbon: First-Principles Calculations

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Electronic structures of strained MoS2 nanoribbons

Electronic transport in disordered MoS$_2$ nanoribbons

Stiffer Bonding of Armchair Edge in Single‐Layer Molybdenum Disulfide Nanoribbons

Band gap engineering of MoS$_2$ upon compression

Direct Observation of Multiple Rotational Stacking Faults Coexisting in Freestanding Bilayer MoS2

Edge Preference and Band Gap Characters of Mos2 and Ws2 Nanoribbons

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Electronic properties of stacking faults in Bernal graphite

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Quantum conductance of MoS_2 armchair nanoribbons

Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport

Flexible Modulation Of Electronic And Magnetic Properties Of Zigzag H-Mos2 Nanoribbons By Crack Defects

Defects, band bending and ionization rings in MoS2

Edge-Specific Au/Ag Functionalization-Induced Conductive Paths In Armchair Mos2 Nanoribbons

Novel electronic structures from anomalous stackings in NbS$_2$ and MoS$_2$