Abstract:Using the tight-binding model of graphite, incorporating all Slonczewski-Weiss-McClure parameters, we compute the spectrum of two-dimensional states of electrons bound to a stacking fault in Bernal graphite. We find that those bands retain characteristic features of the low-energy bands of a rhombohedral graphene trilayer, which actually represents the lattice structure the fault. Based on the self-consistent analysis of charge and potential distribution across the fault layers, we determine the shape of the Fermi contour for the 2D band, which has the form of three pockets with a hole-like conic dispersion and Dirac points above the Fermi level. The computed frequency of Shubnikov-de Haas oscillations and the cyclotron mass of the fault-bound charge carriers (at the Fermi level) are sufficiently different from the corresponding bulk values in graphite, making such stacking faults identifiable by quantum transport and cyclotron resonance measurements.

What problem does this paper attempt to address?

### Problems the paper attempts to solve This paper aims to study the electronic properties of stacking faults in Bernal graphite. Specifically, the authors calculated the energy spectra of two - dimensional electron states bound to stacking faults in Bernal graphite using the tight - binding model combined with all Slonczewski - Weiss - McClure parameters. #### Main problems include: 1. **The influence of stacking faults on the electronic structure**: - Research how stacking faults change the electronic structure of graphite and explore whether these changes can be detected experimentally. - The authors found that these two - dimensional bands retain the low - energy - band characteristics of rhombohedral trilayer graphene, indicating that stacking faults actually represent this lattice structure. 2. **Fermi contours and dispersion relations**: - Analyzed the shape of Fermi contours of two - dimensional bands determined by self - consistent analysis of inter - layer charge and potential distributions. - It was found that the Fermi contours appear as three pockets with hole - conical dispersion and Dirac points, and these Dirac points are located above the Fermi level. 3. **Identifiability in quantum transport measurements**: - Calculated the Shubnikov - de Haas oscillation frequency and the cyclotron mass of fault - bound carriers and found that these values are significantly different from those of the bulk material of graphite. - This enables stacking faults to be identified by quantum transport and cyclotron resonance measurements. 4. **SdH oscillation frequency and cyclotron mass**: - Predicted the Shubnikov - de Haas oscillation frequency (νSdH≈1 T) of two - dimensional bands related to stacking faults, which is significantly different from the corresponding values of the graphite bulk material (νeSdH≈6.3 T and νhSdH≈4.6 T). - Calculated the cyclotron mass of two - dimensional electrons bound to faults, which is approximately 2/3 of the cyclotron mass of carriers in the bulk material. 5. **Optical oscillation intensity**: - Studied the optical oscillation intensity of various cyclotron harmonics in two - dimensional bands and found that it is mainly dominated by the fundamental - frequency cyclotron line, with only weak ±2ωc satellite lines. #### Summary Through the above research, the authors showed that stacking faults in Bernal graphite carry a two - dimensional band separated from the continuous spectrum of the bulk material and predicted its unique electronic properties, such as Shubnikov - de Haas oscillation frequency, cyclotron mass, and Dirac points. These properties enable stacking faults to be identified and characterized by experimental means such as quantum transport and cyclotron resonance measurements.

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