Paraf fi n wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium – gallium – zinc oxide thin-fi lm transistors

Geng-Wei Chang,Ting-Chang Chang,Yong-En Syu,Tsung-Ming Tsai,Kuan-Chang Chang,Chun-Hao Tu,Fu-Yen Jian,Ya-Chi Hung,Ya-Hsiang Tai

2011-01-01

Abstract:Available online 6 September 2011

What problem does this paper attempt to address?

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

gengwei chang,tingchang chang,yongen syu,tsungming tsai,kuanchang chang,chunhao tu,fuyen jian,yachi hung,yahsiang tai

DOI: https://doi.org/10.1016/j.tsf.2011.08.104

IF: 2.1

2011-01-01

Thin Solid Films

Abstract:In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol–gel process in the atmosphere. The high yield and low cost passivation layer of sol–gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities.
Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Zhi Ye,Hua Xu,Tengfei Liu,Ni Liu,Ying Wang,Ning Zhang,Yang Liu

DOI: https://doi.org/10.1109/ted.2017.2737552

2017-01-01

Abstract:Top-gate zinc oxide thin-film transistors have been fabricated by thermal atomic layer deposition, and the effective process steps to improve the device stability have been investigated in detail. In particular, the incorporation of triple rapid thermal annealing steps in oxygen ambient has been proposed to shift the turn-ON voltage toward the positive direction, reduce interface defects, and suppress gate leakage current. Such devices exhibited near zero turn-ON voltage and significantly enhanced electrical and environmental stability. Repeated I-D-V G(S) sweeping over 900 times in air ambient only caused a shift of the transfer characteristics as low as 0.08 V. Both positive and negative gate bias stress tests on such devices exhibited superior stability performance. Furthermore, ring oscillators based on these devices were found to be capable of highly stable continuous operation over 10 000 s, indicating the devices' suitability for practical circuits-on-glass applications.
Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Xiaoli Xu,Linrun Feng,Shasha He,Yizheng Jin,Xiaojun Guo

DOI: https://doi.org/10.1109/led.2012.2210853

IF: 4.8157

2012-01-01

IEEE Electron Device Letters

Abstract:Bottom-gate top-contact zinc oxide (ZnO) thin-film transistors were fabricated with a low annealing temperature (150 °C) using ammine-hydroxo zinc precursors. The unpassivated devices present profound hysteresis in the measured current-voltage characteristics and a negative output conductance, which were attributed to the interaction of back surface with the oxygen molecules in the ambient atmosphere. To suppress the ambient influence without impacting the device's intrinsic performance, a simple low-temperature (75 °C ) solution-based passivation approach with polydimethylsiloxane was developed. The passivated devices present typical field-effect transistor behaviors of greatly improved device performance.
Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

Muhammad Asif,Ding Peng,Chen,Wang Xi,Saeedullah Jan,Jin Zhi

DOI: https://doi.org/10.1166/jnn.2019.15813

2019-01-01

Journal of Nanoscience and Nanotechnology

Abstract:This paper analyses, the influence of Si₃N₄-PECVD and Al₂O₃-ALD surface passivation on the DC and RF characteristics of InP HEMTs with different gate lengths 0.08 μm, 0.1 μm, 0.12 μm, and 0.15 μm. A significant improvement in maximum drain current IDS, MAX, transconductance gm, MAX and oscillation frequency fmax, MAX is obtained by scaling the thickness of the passivation layers An increase in gm, MAX and fmax, MAX, fT, MAX is observed by reducing parasitic capacitance w.r.t. the decrease in gate length. In addition, an analytical model of fT based on a small-signal equivalent circuit is developed, which consist of extrinsic parameters Rs, Rd, Cgs_ext and Cgd_ext and intrinsic parameters Cgsi, Cgdi, gmi and goi. The carrier transport is improved by increasing gmi, thus the transit time τt , the parasitic charging delay τext and the τpar are reduced by lowering the extrinsic capacitances. An excellent fitting between measured and simulated fT is achieved, which inturn leads a realistic way for further improvement in fT.
A Comparative Study on Fluorination and Oxidation of Indium–Gallium–Zinc Oxide Thin-Film Transistors

Lei Lu,Zhihe Xia,Jiapeng Li,Zhuoqun Feng,Sisi Wang,Hoi Sing Kwok,Man Wong

DOI: https://doi.org/10.1109/led.2017.2781700

IF: 4.8157

2018-01-01

IEEE Electron Device Letters

Abstract:Both fluorination and oxidation have been employed to passivate defects in indium-gallium-zinc oxide thin-film transistors, leading to enhanced device attributes. It is presently reported that the former is more effective than the latter, requiring shorter process time (hence improved manufacturing efficiency), resulting in reduced initial defect population (hence enhanced scalability), and more robust resistance against process-and stress-induced defect generation (hence improved reliability). It is determined that the fluorine drive-in heat treatment is best conducted in an oxidizing atmosphere.
Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Haifeng Pu,Guifeng Li,Jiahan Feng,Baoying Liu,Qun Zhang

DOI: https://doi.org/10.1088/0268-1242/26/9/095004

IF: 2.048

2011-01-01

Semiconductor Science and Technology

Abstract:Thin film transistors (TFTs) with amorphous indium zinc oxide (a-IZO) as channel layers and poly-4-vinylphenol as dielectric layers were fabricated. Transmission curves show that the double-layer structure of the a-IZO layer and the poly-4-vinylphenol layer exhibits the antireflection effect. It was found that post heat-treatment at relatively low temperature will improve the electrical performance of the transistors. TFT devices with saturation mobility of 25.4 cm(2) V-1 s(-1), threshold voltage of 4.0 V, subthreshold swing value of 0.88 V/decade and current on/off ratio of 10(6) were obtained.
Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors

Chung-I Yang,Chang,Po-Yung Liao,Bo-Wei Chen,Wu-Ching Chou,Guan-Fu Chen,Shin-Ping Huang,Yu-Zhe Zheng,Yu-Xuan Wang,Hsi-Wen Liu,Chien-Yu Lin,Yu-Shan Lin,Ying-Hsin Lu,Shengdong Zhang

DOI: https://doi.org/10.1109/ted.2017.2786144

IF: 3.1

2018-01-01

IEEE Transactions on Electron Devices

Abstract:This paper utilizes electrical analyses and a study of physical mechanisms to investigate metal gate structure-dependent performance in amorphous InGaZnO (a-IGZO) thin-film transistors. The effects of different shielding areas between the IGZO layer and metal gate are investigated. In devices with shorter metal gate lengths, an abnormal rise in capacitance at the off-state in capacitance-voltage (C-V) characteristic curves can be observed. This can be attributed to the stronger electric field induced by the edge of the metal gate under bias sweep when the metal gate length is shorter than the IGZO layer length. Light illumination measurements indicate a negative shift in threshold voltage and an increase in subthreshold-leakage current regardless of relative metal gate length. Moreover, negative threshold voltage shift becomes more severe with a more obvious hump in C-V characteristic curves under back-light illumination of a shorter width device, a phenomenon which has been verified by simulation.
P‐9: Parylene / Al2O3 Double Layer Passivated Amorphous InGaZnO Thin‐Film Transistors

Xiaoliang Zhou,Gang Wang,Yang Shao,Letao Zhang,Huiling Lu,Shuming Chen,Dedong Han,Yi Wang,Shengdong Zhang

DOI: https://doi.org/10.1002/sdtp.11858

2017-01-01

Abstract:Amorphous InGaZnO thin‐film transistors (a‐IGZO TFTs) passivated by parylene / Al 2 O 3 double layer are fabricated. The parylene layer prevents the channel layer from ion bombardment during Al 2 O 3 sputtering. Al 2 O 3 blocks O 2 and water effectively. It is shown that a‐IGZO TFTs with the proposed passivation are stable in the ambient atmosphere.
Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs

Jiangjiang J. Gu,Xinwei Wang,Heng Wu,Roy G. Gordon,Peide D. Ye

DOI: https://doi.org/10.1109/led.2013.2248114

IF: 4.8157

2013-01-01

IEEE Electron Device Letters

Abstract:High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that inserting an ultrathin (0.5nm) Al2O3 interfacial layer between higher-k and InGaAs can significantly improve the interface quality and reduce device variation. As a result, a record low subthreshold swing of 63mV/dec has been demonstrated at sub-80nm Lch for the first time, making InGaAs GAA nanowire devices a strong candidate for future low-power transistors.
Improvement of the electrical properties of amorphous indium-gallium-zinc oxide thin-film transistors by cross-linked CYTOP passivation

Won-Young Kim,Hyo Eun Kim,Ariadna Schuck,Min-Kyung Shin,Kook Chul Moon,Hwarim Im,Yong-Sang Kim

DOI: https://doi.org/10.1016/j.apsusc.2024.159304

IF: 6.7

2024-01-08

Applied Surface Science

Abstract:In this study, we investigated the effect of a cross-linked CYTOP passivation layer on the electrical properties of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). Cross-linked CYTOP passivation showed a deeper fluorine diffusion depth than CYTOP passivation owing to the chemical reaction between the cross-linking agent and IGZO layer. The cross-linking agent reduces the weakly bonded oxygen in the IGZO layer via a chemical reaction, enhancing fluorine diffusion into the IGZO layer. Therefore, the effect of fluorine on the IGZO layer was enhanced by using cross-linked CYTOP as a passivation layer. The diffused fluorine reduced the defect states by passivating the oxygen-related defects such as oxygen vacancies and weakly bonded oxygen and increased the carrier concentration by replacing metal–oxygen bonds with metal-fluorine bonds. IGZO TFTs with cross-linked CYTOP passivation exhibited a threshold voltage of −0.35 V, saturation mobility of 1.93 cm 2 /V∙s, and subthreshold swing of 0.53 V/dec. Using a cross-linked passivation layer also improved the reliability under positive gate bias stress. Consequently, a cross-linked CYTOP passivation layer can effectively improve the electrical properties of IGZO TFTs by incorporating fluorine atoms into the IGZO layer.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
A Bottom-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistor With an Inherent Etch-Stop and Annealing-Induced Source and Drain Regions

Lei Lu,Man Wong

DOI: https://doi.org/10.1109/ted.2014.2375194

IF: 3.1

2015-02-01

IEEE Transactions on Electron Devices

Abstract:The resistivity of an indium-gallium–zinc oxide (IGZO) thin film was found to depend on not only the conditions of its thermal annealing but also the oxygen-permeability of the cover film during the heat treatment. Based on this observation, a technology for constructing a bottom-gate IGZO thin-film transistor with annealing-induced source and drain (S/D) regions is proposed and demonstrated. The S/D and channel regions with this device architecture are capped, respectively, by impermeable and permeable covers. During a subsequent heat treatment in an oxidizing atmosphere, the resistivity of the S/D regions is greatly reduced; while the channel region, being exposed to the oxidizing atmosphere through the permeable cover, retains its highly resistive character. The permeable cover protects the channel region by serving additionally as an inherent back-channel etch-stop during the etching of the impermeable cover. No patterning is needed to realize this etch-stop, implying a lower manufacturing cost.

engineering, electrical & electronic,physics, applied
P-9: Parylene / Al<sub>2</sub> O<sub>3</sub> Double Layer Passivated Amorphous InGaZnO Thin-Film Transistors

Xiaoliang Zhou,Gang Wang,Yang Shao,Letao Zhang,Huiling Lu,Shuming Chen,Dedong Han,Yi Wang,Shengdong Zhang

DOI: https://doi.org/10.1002/sdtp.11858

2017-01-01

SID Symposium Digest of Technical Papers

Abstract:Amorphous InGaZnO thin‐film transistors (a‐IGZO TFTs) passivated by parylene / Al 2 O 3 double layer are fabricated. The parylene layer prevents the channel layer from ion bombardment during Al 2 O 3 sputtering. Al 2 O 3 blocks O 2 and water effectively. It is shown that a‐IGZO TFTs with the proposed passivation are stable in the ambient atmosphere.
Fluorinated Metal-Oxide Thin-Film Transistors for Circuit Implementation on a Flexible Substrate

Runxiao Shi,Sisi Wang,Zhihe Xia,Lei Lu,Man Wong

DOI: https://doi.org/10.1109/jflex.2021.3140044

2021-01-01

IEEE Journal on Flexible Electronics

Abstract:The effects of fluorination on amorphous indium gallium zinc oxide thin-film transistors and circuits fabricated on a polyimide flexible substrate were studied. Attributed to more effective passivation of donor defects for a given thermal budget, fluorination resulted in suppressed apparent short-channel effects and better uniformity of turn-on voltage with reduced negative shift after laser lift-off from a glass carrier substrate. As representative digital circuits, two-input four-output (2-4) decoders were fabricated and characterized to demonstrate the advantages of incorporating fluorination in the construction of circuit building blocks, leading to higher gain, wider noise margins, more tightly distributed transition voltage, and larger output swing.
Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

GongTan Li,Bo-Ru Yang,Chuan Liu,Chia-Yu Lee,Chih-Yuan Tseng,Chang-Cheng Lo,Alan Lien,Shaozhi Deng,Han-Ping D. Shieh,Ningsheng Xu

DOI: https://doi.org/10.1088/0022-3727/48/47/475107

2015-01-01

Abstract:The threshold voltage shift (Delta Vth) under positive gate bias stress (PGBS), generally found in amorphous InGaZnO thin-film transistors (a-IGZO TFTs), has usually been suppressed by external passivation layers. We report it can also be alleviated by the self-passivation effect of the active layer, where moderately increasing the active layer thickness (d(s)) reduces Delta Vth by 82% in SiOx-passivated a-IGZO TFTs. Our experiments in conjunction with simulations show that the instability of V-th comes from ambient factors at the back channel. Larger d(s) results in lower carrier concentrations at the back channel (N-back), fewer diffusive ions affecting the front channel, and much more stable operations under PGBS. The optimal thickness of an IGZO film simultaneously obtaining a small Delta V-th, near-zero Vth, and sharp sub-threshold swing is about 80-90 nm, thicker than those usually adopted. The self-passivation effect combined with the externally deposited passivation layer can improve the overall device reliability.
Improved Subthreshold Characteristics of Epi-Silicon FinFET via Fin Surface Passivation Technologies

Wang Peng,Guanqiao Sang,kun Yang,Jiaxin Yao,lianlian li,Lei Cao,Renjie Jiang,Yupeng Lu,qingkun li,Qingzhu Zhang,Junfeng Li,Huaxiang Yin

DOI: https://doi.org/10.1149/2162-8777/ad8187

IF: 2.2

2024-10-02

ECS Journal of Solid State Science and Technology

Abstract:As demand for advanced integrated circuits (ICs) continues to grow, fin field-effect transistors (FinFETs) have remained highly influential in the IC market because of their mature fabrication process and powerful driving capabilities. However, the ion bombardment that occurs during the reactive ion etching (RIE) process used to form the fin structure increases the fin's surface roughness and results in a high interfacial state density (Dit), which hinders further improvement in the subthreshold swing (SS) of FinFETs. To overcome this issue, this study proposes two oxidative trimming methods for use on the fin structures to improve their interface quality. It is found that conventional thermal oxidation and low-temperature oxidation processes reduced the channel Dit by 73.31% vs. 71.17%, respectively. Furthermore, the corresponding SS values of the device improved to 72.76 and 71.72 mV/dec, respectively. The technical solutions proposed in this paper represent a promising approach for performance optimization of FinFETs and other advanced devices.

materials science, multidisciplinary,physics, applied
P‐19: Student Poster: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistors for Gate‐Driver Circuit Fabricated on a Flexible Substrate

Runxiao Shi,Sisi Wang,Yuqi Wang,Zhichao Zhou,Zhihe Xia,Lei Lu,Man Wong

DOI: https://doi.org/10.1002/sdtp.14891

2021-01-01

Abstract:The effects of fluorination on amorphous indium‐gallium‐zinc oxide thin‐film transistors fabricated on polyimide (PI) at a maximal temperature of 300 °C were investigated. An excimer laser was used to lift‐off the PI from a glass‐based carrier substrate. The resulting TFTs exhibit more positive threshold voltage, steeper subthreshold swing, reduced apparent short‐channel effects, and tighter distribution of device parameters. Various test circuit blocks and a 4‐stage 15T1C gate driver were constructed to demonstrate the beneficial effects of fluorination on circuit applications.
Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si 3 N 4 Bilayer Passivation

Jielong Liu,Minhan Mi,Jiejie Zhu,Siyu Liu,Pengfei Wang,Yuwei Zhou,Qing Zhu,Mei Wu,Hao Lu,Bin Hou,Hong Wang,Xiaolong Cai,Yu Zhang,Xiangyang Duan,Ling Yang,Xiaohua Ma,Yue Hao

DOI: https://doi.org/10.1109/ted.2021.3133822

IF: 3.1

2022-02-01

IEEE Transactions on Electron Devices

Abstract:AlGaN/GaN high-electron-mobility transistors (HEMTs) with Si-rich SiN/Si3N4 bilayer passivation were studied in this article. The use of a Si-rich SiN interlayer leads to improved channel transport property, current collapse, power performance, and temperature-dependent stability. Devices without Si-rich SiN interlayer passivation exhibit an increase in the gate leakage current by over three orders of magnitudes with temperature increasing from 300 to 420 K, leading to an increase in a current collapse from 9.7% to 24.7%, while the devices with Si-rich SiN passivation exhibit a weak temperature dependence of leakage current and a constant current collapse about 5%. Small signal characterization shows that Si-rich SiN passivation results in a remarkable decrease in the effective gate length by ~15% with temperature up to 420 K. At 17 GHz, devices with Si-rich SiN interlayer passivation exhibit an output power density of 7 W/mm and a peak power-added efficiency (PAE) of 56%. The improved power performance of devices using Si-rich SiN interlayer passivation is attributed to the suppressed current collapse and superior device stability under high channel temperature.

engineering, electrical & electronic,physics, applied
Effect of passivation layer on back channel etching InGaZnO thin film transistors

Chen Wang,Pan Wen,Cong Peng,Meng Xu,Long-Long Chen,Xi-Feng Li,Jian-Hua Zhang,School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China,Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072, China

DOI: https://doi.org/10.7498/aps.72.20222272

IF: 0.906

2023-04-24

Acta Physica Sinica

Abstract:Author(s): Wang Chen, Wen Pan, Peng Cong, Xu Meng, Chen Long-Long, Li Xi-Feng, Zhang Jian-Hua Amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFT) are widely used in active-matrix displays because of their excellent stability, low off-current, high field-effect mobility, and good process compatibility. Among IGZO TFT device structures, back channel etching (BCE) is favorable due to low production cost, short channel length and small SD-to-gate capacitance. In this work, prepared are the BCE IGZO TFTs each with the passivation layer of silicon dioxide (SiO<sub<2< (pi)="" (v·s),="" 0.28="" 1.1×10<sup<7<="" 1.5×10<sup<10<="" 1.6="" 10<sup<–11<="" 10<sup<–14<="" 22.4="" 380="" 4.7="" a="" a,="" after="" also="" an="" and="" annealing="" applications="" are="" at="" attributed="" avoid="" avoided;="" back="" bce="" be="" behavior.="" better="" bias="" broad="" by="" channel="" channel.="" channel;="" charged="" cm<sup<2<="" comparing="" comprehensively,="" confirms="" content="" conventional="" could="" current="" decade,="" decreases="" defects="" degradation="" devices="" difference="" diffuse="" diffusion="" direct="" disappearance="" display="" donor="" dramatically="" easily="" effect="" effective="" electrical="" especially="" etchant="" etching="" exist="" explained="" field="" film="" first,="" following="" formation="" from="" greatly,="" h<sub<2<="" harder="" have="" higher="" hydrogen="" hydrogen-related="" i<sub<="" illumination="" improved="" impurities="" impurities,="" impurity="" in="" incorporation="" increases="" indicates="" industry.<="" interstitial="" into="" introduced="" is="" layer="" layer.="" less="" lower="" mechanisms:="" might="" mobility="" more="" negative="" of="" off<="" on-off="" or="" output="" p="" passivation="" performance="" performance,="" pi="" pi,="" polyimide="" positively="" precursor="" process="" promises="" quality="" radicals="" ratio="" rises="" saturation="" sd="" second,="" shallow-level="" shifting="" shows="" sih<sub<4<="" sio<sub<2<="" sites="" specifically,="" stabilities="" stability="" stacked="" states="" structure="" study="" sub<="" sub<),="" sub<-based="" sub<-pi="" sub<o<sub<2<="" substituted="" subthreshold="" sup<="" sup Acta Physica Sinica. 2023 72(8): 087302. Published 2023-04-20</sub<2<>

physics, multidisciplinary
P‐1.14: the Influence of Bottom Gate Dielectric Roughness on the Performance of Double‐Gate A‐igzo Thin Film Transistors

Ludong Qin,Xuan Deng,Jinao Tao,Shengdong Zhang

DOI: https://doi.org/10.1002/sdtp.13608

2019-01-01

Abstract:In this paper,double gate amorphous indium gallium zinc oxide thin film transistors (a‐IGZO TFTs)are investigated in which we use SiO2 deposited by plasma enhanced chemical vapor deposition(PECVD) as bottom‐gate dielectric with different roughness measured by AFM. Our results show that the devices with smaller roughness of bottom‐gate dielectric, which is able to decrease the interface scattering between a‐IGZO surface conducting channel and gate dielectric, can get much larger on state currents and bigger field effect mobilities.Besides,the devices still have good interface properties according to hysteresis curves.
P‐4: Enhanced Scalability and Reliability of High Mobility Elevated‐Metal Metal‐Oxide Thin‐Film Transistors with Bandgap Engineering

Zhihe Xia,Xuchi Liu,Yuqi Wang,Jiapeng Li,Rongsheng Chen,Lei Lu,Hoi-Sing Kwok,Man Wong

DOI: https://doi.org/10.1002/sdtp.14127

2020-01-01

Abstract:The effects of bandgap engineering on the performance of elevated‐metal metal‐oxide thin‐film transistors were investigated. The incorporation of gallium in the indium‐tin‐zinc oxide thin‐film transistor channel was shown to lead to enhanced scalability and reliability. The improvement is attributed to the effective widening of the energy band, and the reduction of the population of defects and background carriers.

Paraf fi n wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium – gallium – zinc oxide thin-fi lm transistors

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

A Comparative Study on Fluorination and Oxidation of Indium–Gallium–Zinc Oxide Thin-Film Transistors

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors

P‐9: Parylene / Al2O3 Double Layer Passivated Amorphous InGaZnO Thin‐Film Transistors

Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs

Improvement of the electrical properties of amorphous indium-gallium-zinc oxide thin-film transistors by cross-linked CYTOP passivation

A Bottom-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistor With an Inherent Etch-Stop and Annealing-Induced Source and Drain Regions

P-9: Parylene / Al<sub>2</sub> O<sub>3</sub> Double Layer Passivated Amorphous InGaZnO Thin-Film Transistors

Fluorinated Metal-Oxide Thin-Film Transistors for Circuit Implementation on a Flexible Substrate

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Improved Subthreshold Characteristics of Epi-Silicon FinFET via Fin Surface Passivation Technologies

P‐19: Student Poster: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistors for Gate‐Driver Circuit Fabricated on a Flexible Substrate

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si 3 N 4 Bilayer Passivation

Effect of passivation layer on back channel etching InGaZnO thin film transistors

P‐1.14: the Influence of Bottom Gate Dielectric Roughness on the Performance of Double‐Gate A‐igzo Thin Film Transistors

P‐4: Enhanced Scalability and Reliability of High Mobility Elevated‐Metal Metal‐Oxide Thin‐Film Transistors with Bandgap Engineering