Abstract:Using a hot-filament chemical vapour deposition (CVD) method, polycrystalline diamond films have been selectively deposited on Si(111) substrates pre-treated in different ways: roughened Si substrates with patterned Si3N4 mask, and polished Si substrates with selected-area ultrasound treatment by diamond powder. It has been demonstrated that the nucleation density of diamond deposited on the Si3N4 masked area of roughened Si substrate is strongly affected by the temperature on the surface of the substrate while that on the untreated area of polished Si substrate is less affected by the substrate temperature. The diamond nucleation density on the Si3N4 masked area has been shown to be more markedly affected by the concentration of CH4 in H-2 than that on the untreated Si area. It is suggested that the defects and cracks on the Si3N4 mask caused by hydrogen etching and thermal stresses produced during CVD processing are the main reasons for the increase in diamond nucleation on the Si3N4 masked area. The increase in the concentration of CH4 in H-2 appears to inhibit the emergence of defects on the Si3N4 mask. It is also suggested that the internal stresses in the Si substrate, chemical etching from hydrogen atoms and other factors cause defects and cracks on polished Si at substrate temperatures of above 900-degrees-C, which lead to an increase in diamond nucleation on the untreated area of the polished Si substrate.

a y ond ost Si 1 implantation : A pretreatment method for diamond nucleation on a Si wafer

Si+ Implantation: A Pretreatment Method for Diamond Nucleation on a Si Wafer

Ion beam nucleation of diamond

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

Discharge Induced Enhancement of Diamond Nucleation on Si Via Hot Filament Chemical Vapor Deposition

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

Electron-Emission-Enhanced Diamond Nucleation on Si by Hot Filament Chemical Vapor Deposition

NUCLEATION AND GROWTH OF DIAMOND FILM ON POROUS SILICON SUBSTRATE

Selected-Area Diamond Deposition On Si Substrates Pretreated In Different Ways

Study of diamond film growth mechanism on porous silicon during hot-filament chemical vapor deposition

Epitaxial Nucleation of Diamond Polytypes on Silicon by Direct Ion Beam Deposition

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

Nucleation of Diamond on Silicon Wafers Using C 60 in the Hot Filament Chemical Vapour Deposition System

A Study of Interface Structure Between Diamond Film and Silicon Substrate

Si-doped Diamond Films Prepared by Chemical Vapour Deposition

Large-scale Fabrication of High-Density Silicon-vacancy Centers via Helium-ion Implantation of Diamond Nucleation Surface

Diamond Nucleation on Smooth Si3n4-Coated Substrate

Synthesis of Oriented Textured Diamond Films on Silicon Via Hot Filament Chemical Vapor Deposition

Experimental Approach to the Mechanism of the Negative Bias Enhanced Nucleation of Diamond on Si Via Hot Filament Chemical Vapor Deposition

Seed-Free Growth of Diamond Patterns on Silicon Predefined by Femtosecond Laser Direct Writing