Abstract:Bipolar junction transistors (BJTs) are generally employed in spacecraft, due to their current drive capability, linearity and excellent matching characteristics. High-energy particles and cosmic rays in space environment remarkably affect electronic devices, especially in BJTs producing total ionizing dose, displacement damage or single event effect. Among them, ionizing irradiation effects on BJTs dominates. For BJTs, ionization damage can induce the oxide trapped charges in SiO2 layer and interface traps in Si/SiO2, resulting in more recombination base current and the degradation of current gain. Consequently, the accumulation of both oxide charges and interface traps causes an increase in the base current. Passivation layer is also an important factor of the irradiation effects of BJTs. Previous works only studied the degradation of electrical properties of the devices with/without passivation layer induced by irradiation, and did not give an influence mechanisms of passivation layer on the irradiation respond of devices. Therefore, the irradiation damage mechanisms of the BJTs with or without nitride passivation layer are not clear so far. In this paper, the impact of Si3N4 passivation layer on ionizing irradiation damage on lateral PNP bipolar transistors (LPNP) was studied by using Co-60 gamma irradiation source. The KEITHLEY 4200-SCS semiconductor parameter analyzer was used to measure the relationship between the electrical properties of LPNP transistors and ionization dose, including the Gummel characteristics, the degradation of current gain, etc. The irradiation defects of the LPNP transistors with/without passivation layer structure were analyzed by the deep level transient spectroscopy (DLTS). The experimental results show that the electrical properties of the LPNP transistors with and without passivation layer exhibit similar characteristics. For all samples, the base current increases with increasing the total dose, while the collector current does not almost change. Compared with the LPNP transistors without Si3N4 passivation layer, the degradation of LPNP transistor with Si3N4 passivation layer is severe. Based on the excess base current as a function of base-emitter voltage for the LPNP transistors with/without nitride passivation layer, the degradation of bipolar transistors with nitride passivation layer is severe under the same irradiation conditions. The DLTS analyses show that compared with the bipolar transistors without nitride passivation layer, the signal peak located at about 300 K is shifted to low temperature for the bipolar transistors with nitride passivation layer. The above results show that the LPNP transistors with nitride passivation could produce a large number of interface states with the energy level is closer to the middle of the forbidden band during the irradiation, which is attributed to a large number of hydrogen presence during the processing of fabricated passivation layer.

Evolution of Ionization-Induced Defects in GLPNP Bipolar Transistors at Different Temperatures

Separation of Ionization Traps in NPN Transistors Irradiated by Lower Energy Electrons

Effect of Protons Located at Different Region in SiO2 Layer on GLPNP Transistors Degradation

Effect of Electric Field on Radiation Defects in NPN Transistors

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors

Evolution of Radiation Defects in NPN Bipolar Junction Transistors Irradiated by 3 MeV Protons

The Effects of Gamma Irradiation on Neutron Displacement Sensitivity of Lateral PNP Bipolar Transistors

A Technique for Characterizing Ionization and Displacement Defects in NPN Transistors Induced by 1-Mev Electron Irradiation

Characteristic of Displacement Defects in N-P-N Transistors Caused by Various Heavy Ion Irradiations

Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy

Radiation Defects and Annealing Study on PNP Bipolar Junction Transistors Irradiated by 3-Mev Protons

Impact of Passivation Layers on Irradiation Response of PNP Transistors under Different Dose Rates

Radiation Effects of 50-Mev Protons on PNP Bipolar Junction Transistors

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Radiation Damage and Defects in NPN Bipolar Junction Transistors Irradiated by Silicon Ions with Various Energies

Radiation induced deep level defects in bipolar junction transistors under various bias conditions

Characteristics of Displacement Defects in PNP Transistors Caused by Heavy Ion Irradiation

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration

Degradation mechanisms of current gain in NPN transistors