Abstract:Since the introduction of fast integrated circuits, semiconductor manufacturers have concentrated their efforts on reducing the size of transistors. Increased working frequencies (shorter transistors) and decreased power consumption are the goals of circuit designers working on large-scale production costs (with the lowering of supply voltage). Short channel effects (SCEs) are a side effect of transistor shrinkage. While reducing gate oxide thickness in downscaled devices, gate stack engineering is an approach that directs to an increase in leakage current (quantum tunnelling effect). SiO 2 's application as gate insulation is anticipated to result in a gradual increase in tunnelling leakage current. As a result, the market has witnessed an increase in innovative device architectures as Fin field effect transistors (FinFET). Nanosheets is a cutting-edge method that overcomes FinFET's constraints. In this study, sub-nm junction-less Gate Stack Silicon-on-Insulator (SOI) nanosheet FinFETs (NS FinFET) for both low and high levels of doping are examined. From doping concentration (ND) range of 10 16 cm-3 to 10 19 cm-3, the comprehensive DC performance evaluation is examined, including transfer characteristics, output characteristics, subthreshold swing (SS), drain induced barrier lowering (DIBL), and ION/IOFF ratio. The proposed Junction less FinFET produces better switching characteristics with IOFF getting less than nA for all the doping ranges. Furthermore, dynamic power and power consumption of the proposed JLFET is investigated. It shows paradigm shift for the semiconductor industries for low-power and high-performance applications at sub-nm region.

Study of Internal Latchup Behaviors in Advanced Bulk FinFET Technology

5 NM FIN SAQP PROCESS DEVELOPMENT AND KEY PROCESS CHALLENGE DISCUSSION

Evaluation of Threshold Frequencies for Logic Single-Event Upsets at Bulk FinFET Technology Nodes

Analysis of the Single-Event Latch-up Cross Section of a 16nm FinFET System-on-Chip using Backside Single-Photon Absorption Laser Testing and Correlation with Heavy Ion Data

Static CMOS Latch-Up Considerations in HVIC Design

Performance Enhancement of FinFET Devices with Gate-Stack (GS) High-K Dielectrics for Nanoscale Applications

Mechanism Study of Hot Carrier Degradation Recovery by Gate Induced Drain Leakage in 14nm N FinFET

Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-Nm UTBB FD-SOI Technology

Simulation Study on the Charge Collection Mechanism of FinFET Devices in Single-Event Upset

Design of Single-Event Tolerant Latches in 65nm CMOS Technology for Enhanced Scan Delay Testing

Interconnection Reliability on FinFET Devices

An experimental extracted model for latchup analysis in CMOS process

Advanced RMG module to improve AC/DC performance for 14nm FinFETs and beyond

Analysis and Design of a 32nm FinFET Dynamic Latch Comparator

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Simulation on the performance comparison for nanoscale SOI and bulk junctionless FinFETs

Design and Analysis of Gate Stack Silicon-on-Insulator Nanosheet FET for Low Power Applications

Suppression of Stress-Induced Defects in FinFET by Implantation and STI Co-Optimization

Investigation of the Off-State Degradation in Advanced FinFET Technology—Part I: Experiments and Analysis

Effects of Ultra-Thin Si-fin Body Widths Upon SOI PMOS FinFETs

Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs