Abstract:Background: The insatiable need for low-power and high-performance integrated circuit (IC) results in the development of alternative options for metal oxide semiconductor field effect transistor (MOSFET) in the ultra-nanoscale regime. The practical challenge of the device scaling limits the use of MOSFET for future technology nodes. ICs are equipped with billions of transistors whose size must be scaled while increasing performance. As the size of the transistor shrinks for the new technology node, the control of the gate over the channel also reduces, leading to sub-threshold leakage. The non-planar technology is the potential methodology to design the ICs for the future technology nodes. The fin-shaped field effect transistor (FinFET) is the most valuable non-planar technology. High sub-threshold slope, better short channel effect (SCE) control, high current drive strength, low dopant-prompted variations, and decreased power dissipation are the prominent features of FinFET technology. Objective: FinFET is an advanced version of MOSFET in terms of geometrical structure. Therefore, in this review paper, the different geometrical structures, working operations, design challenges, future aspects, and the different configurations of FinFETs are presented. The performance of the different configurations of a 1-bit full adder is evaluated and compared. Methods: An overview of FinFET evolution from the planar MOSFET, along with its architecture supported by the requisite equations, is presented in the paper. Besides this, it also gives an insight into the circuit simulation using the FinFETs for the process voltage temperature (PVT) variations, width quantization, design challenges, and the future of FinFETs. A comparative study of FinFET-based 1-bit full adder using various techniques is done to compute and compare the leakage power, delay, and power delay product (PDP). Results: The full adders using FinFETs show less leakage power and PDP. The AND-OR logicbased hybrid full adder using FinFETs shows the least energy consumption per switching. Fin- FET-based gate diffusion input adder shows a 74 % reduction in dynamic power compared to the full adder using MOSFET technology. The low power FinFET-based full adder shows a 54.16 % reduction in leakage power compared to the MOSFET-based full adder. The results signify the effect of multi-gates in curbing the leakage power dissipation. Conclusion: MOSFET faces the practical challenge of device scaling and SCEs at lower technology nodes. It initiates the multi-gate technology for future system generation. FinFET has the capability to design low-power and high-performance circuits in an ultra-nanoscale regime. The geometrical structure of FinFET plays a key role to improve the performance metrics in an ultrananoscale regime.

Evaluation of Threshold Frequencies for Logic Single-Event Upsets at Bulk FinFET Technology Nodes

Modeling Logic Error Single-Event Cross Sections at the 7-nm Bulk FinFET Technology Node

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

The Gate Length Dependence of Single Event Upset in 14nm Bulk and SOI Finfet Sram Cells

Design and Analysis of 18 nm FinFET Device with High Density Meshing for High-speed and Ultra-low Power Applications

Performance analysis of FinFET based inverter, NAND and NOR circuits at 10 NM,7 NM and 5 NM node technologies

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

Analysis of the Single-Event Latch-up Cross Section of a 16nm FinFET System-on-Chip using Backside Single-Photon Absorption Laser Testing and Correlation with Heavy Ion Data

Investigation of Dynamic Leakage-Suppression Logic Techniques Crossing Different Technology Nodes from 180 Nm Bulk CMOS to 7 Nm FinFET Plus Process

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

Study of Internal Latchup Behaviors in Advanced Bulk FinFET Technology

Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor

The effect of design parameters on single-event upset sensitivity of MOS current mode logic

Review of the Nanoscale FinFET Device for the Applications in Nano-regime

Benchmarking of Analog/RF Performance of Fin-FET, NW-FET, and NS-FET in the Ultimate Scaling Limit

New Insights Into The Near-Threshold Design In Nanoscale Finfet Technology For Sub-0.2v Applications

Low Power, and Highly Reliable Single Event Upset Immune Latch for Nanoscale CMOS Technologies

22Ffl: A High Performance and Ultra Low Power Finfet Technology for Mobile and Rf Applications

Design and Analysis of Gate Stack Silicon-on-Insulator Nanosheet FET for Low Power Applications

Single Event Upset Sensitivity of 45 Nm FDSOI and SOI FinFET SRAM