Abstract:Aiming at the electroplating filling problem of deep via TSV(through silicon via)interconnection,the multi-compati-ble integrated manufacturing technology team at the Shanghai Jiao Tong University has completed the numerical solution of the equations and realized the numerical simulation of TSV filling mode by applying the finite element method with arbitrary Lagrange Euler algorithm.The filling mechanisms of blind vias,the butterfly filling form for the through vias and the simultaneous filling mode of vias with different aspect ratios are analyzed by simulation,contributing to the parameter optimization and sample manu-facturing.The effects of electroplating current density and heat treatment temperature on the mechanical properties of electroplating filled TSV-Cu were investigated by in-situ compression test and uniaxial film tensile test.With the increase of heat treatment tem-perature,the fracture strength and yield strength decreased significantly,and the Young's modulus changed slowly in a corrugated shape.The influence of the current density was more complexed.Based on the above research results,the thermal deformation mechanism of interconnection structure caused by thermal mismatch stress was studied through the self-built in-situ testing system,which gives change in the real-time deformation of TSV-Cu with temperature.The results showed that the thermal deformation pro-cess can be divided into the elastic deformation stage,the quasi plastic strengthening stage and the plastic deformation stage.

Study On Physical Properties Of Ultrasonic-Assisted Copper Electrodeposition In Through Silicon Via

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Influence of Electroplating Current Density on Through Silicon Via Filling

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Parameter Analysis on the Ultrasonic Tsv-Filling Process and Electrochemical Characters

Study of internal stress on electroplating copper used in through silicon via filling

Effect of Ultrasound on Copper Filling of High Aspect Ratio Through-Silicon Via (TSV)

Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution

Research Progress of Copper Electrodeposition Filling Mechanism in Silicon Vias

Effect of current density on microstructure and mechanical property of Cu micro-cylinders electrodeposited in through silicon vias

Study on copper plating solutions for fast filling of through silicon via (TSV) in 3D electronic packaging

Study Of Mechanical Properties Of Cu Through-Silicon-Vias (Tsv) Specimen Using Electrodeposition Bath

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Linear Sweep Voltammetric Study on the Copper Electrodeposition of Though-Silicon-Vias

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Impact of Bath Stability on Electroplated Cu for Through-Silicon-Vias (TSV) in a Controlled Manufacturing Environment

Research on Effect of Annealing on Copper Deposited by Electroplating in High Density TSV

Microstructures of Copper Electroplated Through-Silicon Via Characterized by Electron Backscattering Diffraction Technique

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process