Abstract:Microstructure and texture of electrodeposited Cu micro-cylinders in the blind hole play a vitally important role in the electrical and mechanical properties of the three-dimensional (3-D) IC (integrated circuit)/Si integrations. In this paper, a new commercial additive system, which is specifically developed for the high-aspect-ratio through-silicon-via (TSV) filling, was used to electrodeposit Cu in the blind holes. The microstructure of electrodeposited Cu micro-cylinder in the blind hole with a diameter of 40 mu m and a depth of 140 mu m was investigated by electron back-scattered diffraction (EBSD) technique. Grain size distribution of the Cu micro-cylinder in the blind hole differed from the bottom to the top. The grain boundaries contained a high fraction of Sigma 3 CSL (coincident site lattice) boundaries. It has been reported that the Cu overburden film on the surface of the blind hole influenced the crystallographic orientation of Cu grains inside the damascene trench. So the effects of the current density and additive concentration on the crystal structure of the overburden Cu film were also studied in this study. The experimental results indicated that the preferred orientation of the Cu overburden film changed from {111} to {220} when the current density increased from 2 to 80 mA cm(-2). However, the effect of additives on the crystal structure of the Cu overburden film was dependent on the crystal structure of the seed layer. Copyright (C) 2016, The editorial office of Journal of Materials Science & Technology. Published by Elsevier Limited. All rights reserved.

Microstructures of Copper Electroplated Through-Silicon Via Characterized by Electron Backscattering Diffraction Technique

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Influence of Electroplating Current Density on Through Silicon Via Filling

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Study of internal stress on electroplating copper used in through silicon via filling

Microstructure of Electrodeposited Cu Micro-cylinders in High-Aspect-Ratio Blind Holes and Crystallographic Texture of the Cu Overburden Film

Microstructure and Hardness of Electrodeposited Copper Microcylinders in Through-Silicon Via by Direct Current Power

Effect of current density on microstructure and mechanical property of Cu micro-cylinders electrodeposited in through silicon vias

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

Study On Physical Properties Of Ultrasonic-Assisted Copper Electrodeposition In Through Silicon Via

The Influence of Annealing on Characteristics of Copper in Tsv

Research Progress of Copper Electrodeposition Filling Mechanism in Silicon Vias

Optimization of Cu electrodeposition parameters for Through Silicon Via (TSV)

Influence of Leveler Concentration on Copper Electrodeposition for Through Silicon Via Filling

Evaluating the Via Filling Performance with Thin Surface Cu by the Synergistic Effect of Different Additives

Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

Through silicon via filling by copper electroplating in acidic cupric methanesulfonate bath

Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system