Abstract:Through silicon via (TSV) technology is the key enabling technology of high density, high performance three dimensional packaging such as System-in-Package (SiP) and System-on-Chip (SoC). In TSV technology, to obtain high-aspect ratio vias with good electrical and mechanical properties, filling the material (copper mostly) without voids or seams in the vias is vitally important. The filling properties of the copper is influenced significantly by the additives in the electrolyte, especially the accelerator and suppressor. In this simulation work, the electroplating process was described by a mathematical model, in which the fluid flow of electrolyte, the mass transport of the charged and neutral species and electrochemical reactions on the electrode surface were involved. Based on the mathematical model, the surface coverage of the additives and the local current density distribution at the electrode/electrolyte interface were calculated. The results show that the kinetics and mechanism of the copper deposition reaction are dependent on the fractional surface coverage of the additives. The results show that the suppressor is prior to adsorb at the electrode surface than the accelerator, due to the competitive adsorption of the suppressor and accelerator, by following the Langmiur isotherm adsorption model. Moreover, the coverage of the accelerator (SPS, Na-2(S(CH2)(3)SO3)) is high at the TSV bottom and relatively low at the TSV top. The local current density at the TSV bottom is larger than that at the TSV top and surface due to the influence of the surface coverage of the accelerator and suppressor, which contribute to the superfilling of TSV.

Effect of Chloride Concentration on Copper Deposition in Through Silicon Vias

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Influence of Electroplating Current Density on Through Silicon Via Filling

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

RETRACTED: Copper Electrodeposition in Through-Silicon Via under Galvanostatic Condition

A Numerical Model for Bottom-Up Copper Electrodeposition of TSV with Additives

Electrochemical Analysis of Cathode in TSV Copper Electroplating

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system

Interaction effect of suppressor concentration and current density on the copper deposition rate in TSV filling process

Effect of Chloride Ion on Through-Silicon Via Filling in Methanesulfonic Acid Copper Plating Bath

Behaviors of Chloride Ions in Methanesulfonic Acid Bath for Copper Electrodeposition of Through-Silicon-Via

Effect of Cetyl-Trimethyl-ammonium-bromide (CTAB) and Bis (3-Sulfopropyl) Disulfide (SPS) on the Through-Silicon-via (TSV) Copper Filling

Tetraoxa-Diphosphaspiro Derivative As Suppressor For Microvia Filling By Copper Electroplating In Acidic Solution

Simulating the Influence of Supporting Electrolyte Concentration on Copper Electrodeposition in Microvias

Numerical Simulation of the Tsv-Cu Filling by Electroplating Process with the Accelerator and Suppressor

Simulation of copper electroplating fill process of through silicon via

Pure Bottom-up filling process for efficient TSV metallization

Optimization of Cu electrodeposition parameters for Through Silicon Via (TSV)

Structural Effect of Inhibitors on Adsorption and Desorption Behaviors During Copper Electroplating for Through-Silicon Vias

Observation of the Behavior of Additives in Copper Electroplating Using a Microfluidic Device