Abstract:Through silicon via (TSV) technology is the key enabling technology of high density, high performance three dimensional packaging such as System-in-Package (SiP) and System-on-Chip (SoC). In TSV technology, to obtain high-aspect ratio vias with good electrical and mechanical properties, filling the material (copper mostly) without voids or seams in the vias is vitally important. The filling properties of the copper is influenced significantly by the additives in the electrolyte, especially the accelerator and suppressor. In this simulation work, the electroplating process was described by a mathematical model, in which the fluid flow of electrolyte, the mass transport of the charged and neutral species and electrochemical reactions on the electrode surface were involved. Based on the mathematical model, the surface coverage of the additives and the local current density distribution at the electrode/electrolyte interface were calculated. The results show that the kinetics and mechanism of the copper deposition reaction are dependent on the fractional surface coverage of the additives. The results show that the suppressor is prior to adsorb at the electrode surface than the accelerator, due to the competitive adsorption of the suppressor and accelerator, by following the Langmiur isotherm adsorption model. Moreover, the coverage of the accelerator (SPS, Na-2(S(CH2)(3)SO3)) is high at the TSV bottom and relatively low at the TSV top. The local current density at the TSV bottom is larger than that at the TSV top and surface due to the influence of the surface coverage of the accelerator and suppressor, which contribute to the superfilling of TSV.

Parameter Analysis on the Ultrasonic Tsv-Filling Process and Electrochemical Characters

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Influence of Electroplating Current Density on Through Silicon Via Filling

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Simulation of TSV Copper Electrodeposition Process with Additives

Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution

Effect of Ultrasound on Copper Filling of High Aspect Ratio Through-Silicon Via (TSV)

Electrochemical Analysis of Cathode in TSV Copper Electroplating

High-speed and High-Quality TSV Filling with the Direct Ultrasonic Agitation for Copper Electrodeposition

Study On Physical Properties Of Ultrasonic-Assisted Copper Electrodeposition In Through Silicon Via

Investigations of the electrochemical performance and filling effects of additives on electroplating process of TSV

FEA study on the TSV copper filling influenced by the additives and electroplating process

TSV Filling Technology using Cu Electrodeposition

Effect of Pretreatment on Copper Filling of High Aspect Ratio Through-Silicon Via (TSV)

Effect of additives on copper electroplating profile for TSV filling

Parametric study of electroplating-based via-filling process for TSV applications

Collaborative Effect Between Additives and Current in TSV Via Filling Process

Effect of ultrasound agitation on the properties of copper electrodeposition in micro-via

Numerical Simulation of the Tsv-Cu Filling by Electroplating Process with the Accelerator and Suppressor

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Optimizing Copper Filling Process For Through Silicon Via (TSV)