Abstract:The microvia filling process used in the high-density interconnect printed circuit board manufacturing industry was investigated by multi-physical coupling technology. To achieve a perfect filling, SPS (bis-(sodium-sulphopropyl)-disulphide), EO/PO (ethylene oxide and propylene oxide block co-polymers) and PEOPI (polyethylene oxide-polyimide) were used. Furthermore, electrochemical behaviours of electrodeposition were investigated by cyclic voltammetry, galvanostatic potential transient measurement and dynamic potential polarisation technology. Through numerical simulation, the relationship between coverage of additive, concentration of additive, rotating speed of rotating disc electrode, exchange current density and curve slope was fitted. Based on multi-physical coupling to copper electrodeposition, a mathematical model of microvia filling was built to simulate the filling process by a finite element method, and a systematic analysis of the whole filling process was carried out. The void-free microvia filling and filling process with different shapes were finally achieved in acid copper electroplating solutions consisting of 0.3 M CuSO4·5H2O, 0.2 M H2SO4 and 80 mg L−1 Cl− (virgin make-up solution) plus additives SPS, EO/PO and PEOPI. Subsequently, from images of the microvia filling experiment at different times, shape evolution of the microvia filling and variation of electrodeposition rate at the bottom of the microvia and surface were analysed. The modelling result was compared with the measured data and showed good agreement with the experiment. The results showed that a process model was an excellent tool for quickly and cheaply studying the process behaviour greatly reduced need to execute time-consuming and costly experiments.

Effect of ultrasound agitation on the properties of copper electrodeposition in micro-via

Wetting Process of Copper Filling in Through Silicon Vias

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Influence of Electroplating Current Density on Through Silicon Via Filling

The Influence of Ultrasonic Agitation on Copper Electroplating of Blind-Vias for SOI Three-Dimensional Integration

Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution

Effect of Ultrasound on Copper Filling of High Aspect Ratio Through-Silicon Via (TSV)

Parameter Analysis on the Ultrasonic Tsv-Filling Process and Electrochemical Characters

High-speed and High-Quality TSV Filling with the Direct Ultrasonic Agitation for Copper Electrodeposition

Study On Physical Properties Of Ultrasonic-Assisted Copper Electrodeposition In Through Silicon Via

Study of microvia filling process based on multi-physical coupling

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Research Progress of Copper Electrodeposition Filling Mechanism in Silicon Vias

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Effect of Different Pretreatments on Through Silicon Via Copper Filling

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Effect of Pretreatment on Copper Filling of High Aspect Ratio Through-Silicon Via (TSV)

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Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via