Abstract:Through silicon via (TSV) technology is the key enabling technology of high density, high performance three dimensional packaging such as System-in-Package (SiP) and System-on-Chip (SoC). In TSV technology, to obtain high-aspect ratio vias with good electrical and mechanical properties, filling the material (copper mostly) without voids or seams in the vias is vitally important. The filling properties of the copper is influenced significantly by the additives in the electrolyte, especially the accelerator and suppressor. In this simulation work, the electroplating process was described by a mathematical model, in which the fluid flow of electrolyte, the mass transport of the charged and neutral species and electrochemical reactions on the electrode surface were involved. Based on the mathematical model, the surface coverage of the additives and the local current density distribution at the electrode/electrolyte interface were calculated. The results show that the kinetics and mechanism of the copper deposition reaction are dependent on the fractional surface coverage of the additives. The results show that the suppressor is prior to adsorb at the electrode surface than the accelerator, due to the competitive adsorption of the suppressor and accelerator, by following the Langmiur isotherm adsorption model. Moreover, the coverage of the accelerator (SPS, Na-2(S(CH2)(3)SO3)) is high at the TSV bottom and relatively low at the TSV top. The local current density at the TSV bottom is larger than that at the TSV top and surface due to the influence of the surface coverage of the accelerator and suppressor, which contribute to the superfilling of TSV.

Effect of External Factors on Copper Filling in 3D Integrated Through-Silicon-Vias (TSVs)

Influence of Electroplating Current Density on Through Silicon Via Filling

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Wetting Process of Copper Filling in Through Silicon Vias

Effect of Ultrasound on Copper Filling of High Aspect Ratio Through-Silicon Via (TSV)

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

FEA study on the TSV copper filling influenced by the additives and electroplating process

Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution

Research Progress of Copper Electrodeposition Filling Mechanism in Silicon Vias

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Effect of additives on copper electroplating profile for TSV filling

Collaborative Effect Between Additives and Current in TSV Via Filling Process

Numerical Simulation and Mechanism Analysis of Through-Silicon Via (TSV) Filling Using an Arbitrary Lagrange-Eulerian (ALE) Method

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Effect of Cetyl-Trimethyl-ammonium-bromide (CTAB) and Bis (3-Sulfopropyl) Disulfide (SPS) on the Through-Silicon-via (TSV) Copper Filling

Simultaneous filling of through silicon vias (TSVs) with different aspect ratios using multi-step direct current density

Further Research on the Silicon Via Filling Mechanism Using an Arbitrary Lagrange-Eulerian (ale) Method

Influence of Leveler Concentration on Copper Electrodeposition for Through Silicon Via Filling

Numerical Simulation of the Tsv-Cu Filling by Electroplating Process with the Accelerator and Suppressor

Fast copper plating process for TSV fill