Abstract:In this study, the operation of commercial SBD-based on 4H-SiC after radiation was assessed. The devices were subjected to electron radiation with an energy of 1.7 MeV at different fluences. Then the electrical characteristics of the devices were measured, and related parameters were calculated. The results show that the devices display good radiation resistance at the high fluence of 1015 e/cm2. However, the performance of the devices degrade when the total fluence is 1 x 1016 e/cm2. The variable temperature test and deep-level transient spectrum (DLTS) tests reveal the cause of performance degradation under high fluence. The variable temperature test result shows that the ideality factor of the device at 1 x 1016 e/cm2 increases compared with that devices, indicating more recombination centers are introduced. The donor concentration (ND) significantly decreases at 1 x 1016 e/cm2, and increases with increasing temperature in the range of 350-450 K. The DLTS results show that the change of ND with temperature is related to the decrease of Ec-0.91 defect concentration. During the variable temperature test, certain changes are found in the defects and the defects are due to the repair of the ionization damage during the heating process, the degeneration of the electrical characteristics is mainly caused by the ionization damage rather than the displacement damage. Finally, the radiation-induced displacement damage is mainly located in the region near the metal-semiconductor interface.

Effects of ultraviolet illumination on 4H-SiC Schottky barrier diodes irradiated by swift heavy ions

Heavy Ion Radiation and Temperature Effects on SiC Schottky Barrier Diode

The effect of the interfacial states by swift heavy ion induced atomic migration in 4H-SiC Schottky barrier diodes

Electrical Characterization and Temperature Reliability of 4H-Sic Schottky Barrier Diodes after Electron Radiation

Gamma Irradiation and Annealing Effects on 4H-Sic Schottky Barrier Diode

Investigation of 4H-Sic Schottky Barrier Diodes Irradiated with 6 MeV Au Ions at Low Temperature

Comparison of the Effects of Continuous and Intermittent Electron Irradiation on Commercial 4H-Sic Schottky Barrier Diodes

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Recrystallization Effects of Swift Heavy 209bi Ions Irradiation on Electrical Degradation in 4H-Sic Schottky Barrier Diode

Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Influence of Annealing Treatment on Performance of 4H-Sic SBD Irradiated by Heavy Ions under Room Temperature and Low Temperature

Pinning Effect on Fermi Level in 4H-Sic Schottky Diode Caused by 40-Mev Si Ions

Recovery at room temperature annealing on 4H–SiC SBDs by gamma irradiation

Study of Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes

Electrical characteristics and deep-level transient spectroscopy of a fast-neutron-irradiated 4H–SiC Schottky barrier diode

Study of the Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Effect of Electron Irradiation and Defect Analysis of Β-Ga2o3 Schottky Barrier Diodes