Abstract:Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC devices are extremely small, even after irradiation to very high fluences, enabling operation without cooling and at high temperatures. This study investigates the effect of neutron irradiation on 50$\mu$m p-n 4H-SiC diodes using current-voltage, capacitance-voltage, and charge collection efficiency (CCE) measurements up to neutron fluences of $1\times 10^{16}$ n$_{\text{eq}}$/cm$^2$. The leakage currents of the investigated devices remained extremely small, below 10 pA at 1.1 kV reverse bias. In the forward bias, a remarkable drop of the current was observed, which was attributed to an increased epi resistivity due to compensation of the epi layer doping by deep-level defects. The CCE was evaluated for alpha particles from a radioactive source, a 62.4 MeV proton beam at the MedAustron ion therapy center and using UV-TCT. The charge collection efficiency in reverse bias was shown to scale directly with the 1 MeV equivalent fluence $\Phi_{\text{eq}}$ as $\text{CCE} \propto \Phi_{\text{eq}}^{-0.63\pm0.01}$. A CCE better than 50% was able to be obtained for fluences up to $1 \times 10^{15}$ n$_{\text{eq}}$/cm$^2$. Because of the low currents in the forward direction, particle detection was also possible in forward bias, where the CCE was found to be increased relative to reverse bias. Furthermore, a significant dependency on the amount of injected charge was observed, with the CCE surpassing 100% in alpha and UV-TCT measurements, requiring further systematic investigation.

Pinning Effect on Fermi Level in 4H-Sic Schottky Diode Caused by 40-Mev Si Ions

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

Electron Radiation Effects on the 4H-Sic PiN Diodes Characteristics: an Insight from Point Defects to Electrical Degradation

Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations

A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Electrical characteristics and deep-level transient spectroscopy of a fast-neutron-irradiated 4H–SiC Schottky barrier diode

Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

A Comparison Study of Mechanical Change and Chemical Disorder in 4H-Sic Irradiated with Si5+ and He2+ at Room Temperature

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy

Effect of Various Defects on 4H-Sic Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Comparison of the Effects of Continuous and Intermittent Electron Irradiation on Commercial 4H-Sic Schottky Barrier Diodes

Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-Sic Transistors