Abstract:A systematic investigation of the electrical characteristics of $\beta$-Ga$_2$O$_3$ Schottky barrier diodes (SBDs) has been conducted under high dose $^{60}$Co gamma radiation up to 5 Mrad (Si). Initial exposure of the diodes to 1 Mrad (Si) resulted in a significant decrease in on-current by $\sim$78% and an increase in on-resistance from $\sim$3 m$\Omega \cdot$cm$^2$ to $\sim$14 m$\Omega \cdot$cm$^2$ compared to the pre-radiation condition, likely due to the generation of radiation-induced deep-level acceptor traps. However, upon exposure to higher doses of gamma radiation (3 and 5 Mrad (Si)) over a prolonged duration, the device performance partially recovered due to a radiation annealing effect. This effect is facilitated by secondary electrons generated through Compton scattering, which dissipate kinetic energy as heat throughout the lattice, thereby annealing the trapping centers responsible for device performance degradation. The capacitance-voltage (C-V) characterization revealed that the net carrier concentration in the $\beta$-Ga$_2$O$_3$ drift layer reduced from $\sim$3.19 $\times$ 10$^{16}$ cm$^{-3}$ to $\sim$3.05 $\times$ 10$^{16}$ cm$^{-3}$ after 5 Mrad (Si) irradiation. Temperature-dependent I-V characteristics showed that irradiation leads to a reduction in both forward and reverse current across all investigated temperatures ranging from 25 to 250$^\circ$C, accompanied by slight increases in on-resistance, ideality factors, and Schottky barrier heights. The reverse breakdown characteristics of the $\beta$-Ga$_2$O$_3$ SBDs showed a slight increase of the breakdown voltage after radiation. Overall, $\beta$-Ga$_2$O$_3$ Schottky diode exhibits high resilience to gamma irradiation, with performance degradation mitigated by radiation-induced self-recovery, highlighting its potential for radiation-hardened electronic applications in extreme environments.

Effect of Electron Irradiation and Defect Analysis of Β-Ga2o3 Schottky Barrier Diodes

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Effects of Neutron Irradiation on Electrical Performance of Β-Ga2 O3 Schottky Barrier Diodes

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Investigation on Electrical Performance Degradation Mechanism of $\beta $-Ga$_{\text{2}}$o$_{\text{3}}$ Schottky Barrier Diodes under 3 MeV Proton Radiation

Investigation on Electrical Performance Degradation Mechanism of β-Ga2O3 Schottky Barrier Diodes Under 3 MeV Proton Radiation

Influence of Swift Heavy Ion Irradiation on Electrical Characteristics of Β-Ga2o3 Schottky Barrier Diode

Effects of 300-Mev Proton Irradiation on Electrical Properties of $\Beta$-Ga$_{\text{2}}$otexpreserve2 Schottky Barrier Diodes

Gamma Irradiation Impact on GaN Quasi-Vertical Schottky Barrier Diodes

Radiation Resilience of $β$-Ga$_2$O$_3$ Schottky Barrier Diodes Under High Dose Gamma Radiation

Study on the Single Event Burnout Mechanism of β-Ga2O3 Schottky Barrier Diode Under Heavy Ion Irradiation

Radiation effects of high-fluence reactor neutron on Ni/ β -Ga2O3 Schottky barrier diodes

Study on the Single Event Burnout Mechanism of $\beta$ -Ga $_{\text{2}}$ O $_{\text{3}}$ Schottky Barrier Diode under Heavy Ion Irradiation

Study on the Electrical Performance Degradation Mechanism of Β -Ga2o3 P-N Diode under Heavy Ion Radiation

Defect Identification in Β-Ga2o3 Schottky Barrier Diodes with Electron Radiation and Annealing Regulating

Impact of High-Temperature Forward Bias Stress on the Electrical Performance Degradation of $\Beta$-Ga$_{\text{2}}$o$_{\text{3}}$ Schottky Barrier Diodes

Gamma Irradiation and Annealing Effects on 4H-Sic Schottky Barrier Diode

Experimental Study on Static and Dynamic Characteristics of Ga 2 O 3 Schottky Barrier Diodes with Compound Termination

Heavy Ion Radiation and Temperature Effects on SiC Schottky Barrier Diode

Electrical Characterization and Temperature Reliability of 4H-Sic Schottky Barrier Diodes after Electron Radiation