Abstract:A systematic investigation of the electrical characteristics of $\beta$-Ga$_2$O$_3$ Schottky barrier diodes (SBDs) has been conducted under high dose $^{60}$Co gamma radiation up to 5 Mrad (Si). Initial exposure of the diodes to 1 Mrad (Si) resulted in a significant decrease in on-current by $\sim$78% and an increase in on-resistance from $\sim$3 m$\Omega \cdot$cm$^2$ to $\sim$14 m$\Omega \cdot$cm$^2$ compared to the pre-radiation condition, likely due to the generation of radiation-induced deep-level acceptor traps. However, upon exposure to higher doses of gamma radiation (3 and 5 Mrad (Si)) over a prolonged duration, the device performance partially recovered due to a radiation annealing effect. This effect is facilitated by secondary electrons generated through Compton scattering, which dissipate kinetic energy as heat throughout the lattice, thereby annealing the trapping centers responsible for device performance degradation. The capacitance-voltage (C-V) characterization revealed that the net carrier concentration in the $\beta$-Ga$_2$O$_3$ drift layer reduced from $\sim$3.19 $\times$ 10$^{16}$ cm$^{-3}$ to $\sim$3.05 $\times$ 10$^{16}$ cm$^{-3}$ after 5 Mrad (Si) irradiation. Temperature-dependent I-V characteristics showed that irradiation leads to a reduction in both forward and reverse current across all investigated temperatures ranging from 25 to 250$^\circ$C, accompanied by slight increases in on-resistance, ideality factors, and Schottky barrier heights. The reverse breakdown characteristics of the $\beta$-Ga$_2$O$_3$ SBDs showed a slight increase of the breakdown voltage after radiation. Overall, $\beta$-Ga$_2$O$_3$ Schottky diode exhibits high resilience to gamma irradiation, with performance degradation mitigated by radiation-induced self-recovery, highlighting its potential for radiation-hardened electronic applications in extreme environments.

Enhanced Performance of Vertical $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ Schottky Barrier Diodes Through 212-Mev Low-Fluence Ge Ion Irradiation

Radiation Resilience of $β$-Ga$_2$O$_3$ Schottky Barrier Diodes Under High Dose Gamma Radiation

Investigation on Electrical Performance Degradation Mechanism of β-Ga2O3 Schottky Barrier Diodes Under 3 MeV Proton Radiation

A 1.6 Kv Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

Over 1 GW/cm<SUP>2</SUP> Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes Without Edge Termination

Temperature Dependence of Total Ionizing Dose Effects of β-Ga2O3 Schottky Barrier Diodes

Oxygen Vacancies and Local Amorphization Introduced by High Fluence Neutron Irradiation in Β -Ga2o3 Power Diodes

Effects of X-ray Irradiation on Vertical GaN-on-GaN Schottky Barrier Diode Biased on the Applied Voltage

$β$-Ga$_2$O$_3$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination

Radiation effects of high-fluence reactor neutron on Ni/ β -Ga2O3 Schottky barrier diodes

Improved Β-Ga2o3 Schottky Barrier Diodes Featuring P-Nio Gradual Junction Termination Extension Within Mesa Structure

High Performance Lateral Schottky Diodes Based on Quasi-Degenerated Ga 2 O 3

Vertical β-Ga 2 O 3 Schottky Barrier Diode with the Composite Termination Structure

2.7 Kv Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination

8.7 A/700 V Β-Ga2o3 Schottky Barrier Diode Demonstrated by Oxygen Annealing Combined with Self-Aligned Mesa Termination

Surface Pretreatment by Low-Temperature O$_{\text{2}}$ Gas Annealing for Performance Improvement in Pt/$\beta $-Ga$_{\text{2}}$O$_{\text{3}}$ Schottky Barrier Diodes

High-Voltage ( $\overline{\text{2}}01$ ) $\beta$ -Ga 2 O 3 Vertical Schottky Barrier Diode with Thermally-Oxidized Termination

Improved Vertical beta-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension

High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect

2.5Kv/3.78mω⋅cm² Low Forward Voltage Vertical Β-Ga₂o₃ Schottky Rectifier with Field Plate Assisted Deep Mesa Termination