Abstract:Single-event burnout and single-event leakage current (SELC) in silicon carbide (SiC) power devices induced by heavy ions severely limit their space application, and the underlying mechanism is still unclear. One fundamental problem is lack of high-resolution characterization of radiation damage in the irradiated SiC power devices, which is a crucial indicator of the related mechanism. In this Letter, high-resolution transmission electron microscopy (TEM) was used to characterize the radiation damage in the 1437.6 MeV 181Ta-irradiated SiC junction barrier Schottky diode under 200 V. The amorphous radiation damage with about 52 nm in diameter and 121 nm in length at the Schottky metal (Ti)–semiconductor (SiC) interface was observed. More importantly, in the damage site the atomic mixing of Ti, Si, and C was identified by electron energy loss spectroscopy and high-angle annular dark-field scanning TEM. It indicates that the melting of the Ti–SiC interface induced by localized Joule's heating is responsible for the amorphization and the possible formation of titanium silicide, titanium carbide, or ternary phases. The mushroom-like hillock in the Ti layer can be attributed to Rayleigh–Taylor instability, as another evidence for ever-happened localized melting near the Schottky interface. These modifications at nanoscale in turn cause localized degradation of the Schottky contact, resulting in permanent increase in leakage current. This experimental study provides very valuable clues for a thorough understanding of the SELC mechanism in SiC diodes.

Study of Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes

Study of the Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Mechanism and Physical Model of the Single-Event Leakage Current for SiC JBS Diodes

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Refined Analysis of Leakage Current in SiC Power Metal Oxide Semiconductor Field Effect Transistors after Heavy Ion Irradiation

Gamma Irradiation and Annealing Effects on 4H-Sic Schottky Barrier Diode

Electron Radiation Effects on the 4H-Sic PiN Diodes Characteristics: an Insight from Point Defects to Electrical Degradation

Analysis of Displacement Damage Induced by Silicon-Ion Irradiation in SiC MOSFETs

Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density

Leakage Current and Defect Analysis of Schottky Diodes on Molecular Monolayer-doped Silicon

High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect

Influence of Accumulated Radiation Effects on Single-event Burnout in SiC MOSFETs

Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions

Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs

Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET

Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-Kv SiC JBS-Integrated MOSFETs

Ab Initio Molecular Dynamics Simulation of the Effects of Stacking Faults on the Radiation Response of 3C-Sic