Abstract:Optically detected magnetic resonance (ODMR) is an efficient and reliable method that enables initialization and readout of spin states through spin-photon interface. In general, high quantum efficiency and large spin-dependent photoluminescence contrast are desirable for reliable quantum information readout. However, reliable prediction of the ODMR contrast from first-principles requires accurate description of complex spin polarization mechanisms of spin defects. These mechanisms often include multiple radiative and nonradiative processes in particular intersystem crossing (ISC)among multiple excited electronic states. In this work we present our implementation of the first-principles ODMR contrast, by solving kinetic master equation with calculated rates from \textit{ab initio} electronic structure methods then benchmark the implementation on the case of the negatively-charged nitrogen vacancy center in diamond. We show the importance of correct description of multi-reference electronic states and pseudo Jahn-Teller effect for quantitatively, even qualitatively correct prediction of spin-orbit coupling (SOC) and the rate of ISC. We present the complete calculation of SOC for different ISC processes that align with both group theory and experimental observations. Moreover, we provide a comprehensive picture of excitation and relaxation dynamics, including previously unexplored internal conversion processes. We show good agreement between our first-principles calculations and the experimental ODMR contrast under magnetic field. We then demonstrate reliable predictions of magnetic field direction, pump power, and microwave frequency dependency, as important parameters for ODMR experiments. Our work provides a predictive computational platform for spin polarization and optical readout of solid-state quantum defects from first principles.

Optimization of Power Broadening in Optically Detected Magnetic Resonance of Defect Spins in Silicon Carbide

Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide

Optical Charge State Manipulation of Divacancy Spins in Silicon Carbide under Resonant Excitation

Magnetic-field-dependent spin properties of divacancy defects in silicon carbide

Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN

Cavity-enhanced measurements of defect spins in silicon carbide

Probing spin-phonon interactions in silicon carbide with Gaussian acoustics

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Deep-Learning-Enhanced Single-Spin Readout in Silicon Carbide at Room Temperature

Enhancement of silicon vacancy fluorescence intensity in silicon carbide using a dielectric cavity

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

Excited-State Dynamics and Optically Detected Magnetic Resonance of Solid-State Spin Defects from First Principles

Electrical and optical control of single spins integrated in scalable semiconductor devices

Room-temperature coherent control of implanted defect spins in silicon carbide

Robust coherent control of solid-state spin qubits using anti-Stokes excitation

All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide

Highly efficient optical pumping of spin defects in silicon carbide for stimulated microwave emission

Photon Collection Enhancement of Shallow Single Spin Defects in Silicon Carbide

Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

Integrated Manipulation and Addressing of Spin Defect in Diamond.

Coherent control of defect spins in silicon carbide above 550 K