Abstract:Understanding the optical properties of color centers in silicon carbide is essential for their use in quantum technologies, such as single-photon emission and spin-based qubits. In this work, first-principles calculations were employed using the r2SCAN density functional to investigate the electronic and vibrational properties of neutral divacancy configurations in 4H-SiC. Our approach addresses the dynamical Jahn-Teller effect in the excited states of axial divacancies. By explicitly solving the multimode dynamical Jahn-Teller problem, we compute emission and absorption lineshapes for axial divacancy configurations, providing insights into the complex interplay between electronic and vibrational degrees of freedom. The results show strong alignment with experimental data, underscoring the predictive power of the methodologies. Our calculations predict spontaneous symmetry breaking due to the pseudo Jahn-Teller effect in the excited state of the $kh$ divacancy, accompanied by the lowest electron-phonon coupling among the four configurations and distinct polarizability. These unique properties facilitate its selective excitation, setting it apart from other divacancy configurations, and highlight its potential utility in quantum technology applications. These findings underscore the critical role of electron-phonon interactions and optical properties in spin defects with pronounced Jahn-Teller effects, offering valuable insights for the design and integration of quantum emitters for quantum technologies.

Magnetic-field-dependent spin properties of divacancy defects in silicon carbide

Temperature dependence of divacancy spin coherence in implanted silicon carbide

Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide

Optimization of Power Broadening in Optically Detected Magnetic Resonance of Defect Spins in Silicon Carbide

Optical Charge State Manipulation of Divacancy Spins in Silicon Carbide under Resonant Excitation

Dipolar spin relaxation of divacancy qubits in silicon carbide

Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields

Coherent control of defect spins in silicon carbide above 550 K

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide

First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

Fiber-coupled silicon carbide divacancy magnetometer and thermometer

Theory of the divacancy in 4H-SiC: Impact of Jahn-Teller effect on optical properties

Coherent Control and Magnetic Detection of Divacancy Spins in Silicon Carbide at High Pressures

Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide

Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC

Quantum decoherence dynamics of divacancy spins in silicon carbide

Enhancement of silicon vacancy fluorescence intensity in silicon carbide using a dielectric cavity

Theory of Spin-Acoustic Resonance for Spin-3/2 Si Vacancy with $C_{3v}$ Site Symmetry in Silicon Carbide

Spin-Acoustic Control of Silicon Vacancies in 4H Silicon Carbide