Abstract:First‐principles calculations reveal that the Joule heating induced solid‐liquid transition with increasing disorders in Ovonic threshold switching (OTS) material not only reduces band gap but also makes the original localized band‐edge states delocalized. As a result, the conductivity of OTS material is substantially enhanced. Therefore, the thermal effect should play a significant role in the ON‐state of OTS+PCM devices. Disorder‐induced electronic localization is responsible for the OFF state of the Ovonic threshold switching (OTS) device, which is an indispensable component in the present 3D‐crossbar‐architecture phase‐change memory circuit. However, the atomic mechanism of the OTS device, especially the role of thermal effect, remains a long‐term open question. Recent researches suggest that the working current of the OTS ON‐state is often large enough to melt the adjacent phase‐change memory material in the OTS+PCM devices. Thus, Joule heating‐induced atomic/electronic structure transition in OTS materials must be seriously considered. Taking the typical OTS material GeSe as an example, first‐principles calculations reveal an unexpected electronic delocalization induced by the enhanced structural disorder upon solid‐liquid transition. Meanwhile, as the temperature rises, the band gap decreases or even closes, leading to an increase in carrier concentration. Therefore, the melting filament with high conductivity could be responsible for the holding‐ON state of OTS materials. The results in this study may provide possible explanations for some puzzles of OTS devices, such as the reasons for holding‐ON state and limited endurance.

Evidence of Filamentary Switching and Relaxation Mechanisms in GexSe1-xOTS Selectors

Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.

Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density

First-principles Prediction of the Native Filament: Dielectric Interfaces for the Possible Filamentary Switching Mechanism in Chalcogenide Selector Devices

Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector

Structural Changes During the Switching Transition of Chalcogenide Selector Devices

Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device

A GexSe1-x switch-only-memory technology through polarized atomic distribution

The Investigations of Characteristics of GeSe Thin Films and Selector Devices for Phase Change Memory

Intensive Structural Disorder Induces Electronic Delocalization: Amorphous Solid‐Liquid Transition in Ovonic Threshold Switching Materials

Chalcogenide Selector Devices and Their Non-Linear Conduction Process

Transient Structural Transition in Ovonic Threshold Switching Glass

Anatomy of high-uniform unidirectional volatile switching behavior in SiO2/TiO2-based selection device

Sb‐Se‐based Electrical Switching Device with Fast Transition Speed and Minimized Performance Degradation Due to Stable Mid‐gap States

Atomic-scale investigation on endurance mechanism of the GeTe x -based OTS device by Si doping

Study of Composition-Modulated Interband Transitions Characteristic and Charge Dynamics Response of High-Throughput Fese1-Xtex Combinatorial Film

First-principles screening for sustainable OTS materials

Unravelling the Atomic Mechanisms of Tetrahedral Doping in Chalcogenide Glass for Electrical Switching Materials

Structure, bonding and electronic characteristics of amorphous Se

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

Understanding the role of GeSbTe layer on atomic switch through current sweep mode measurement for enhanced threshold switching device