Abstract:Through silicon via (TSV) technology is the key enabling technology of high density, high performance three dimensional packaging such as System-in-Package (SiP) and System-on-Chip (SoC). In TSV technology, to obtain high-aspect ratio vias with good electrical and mechanical properties, filling the material (copper mostly) without voids or seams in the vias is vitally important. The filling properties of the copper is influenced significantly by the additives in the electrolyte, especially the accelerator and suppressor. In this simulation work, the electroplating process was described by a mathematical model, in which the fluid flow of electrolyte, the mass transport of the charged and neutral species and electrochemical reactions on the electrode surface were involved. Based on the mathematical model, the surface coverage of the additives and the local current density distribution at the electrode/electrolyte interface were calculated. The results show that the kinetics and mechanism of the copper deposition reaction are dependent on the fractional surface coverage of the additives. The results show that the suppressor is prior to adsorb at the electrode surface than the accelerator, due to the competitive adsorption of the suppressor and accelerator, by following the Langmiur isotherm adsorption model. Moreover, the coverage of the accelerator (SPS, Na-2(S(CH2)(3)SO3)) is high at the TSV bottom and relatively low at the TSV top. The local current density at the TSV bottom is larger than that at the TSV top and surface due to the influence of the surface coverage of the accelerator and suppressor, which contribute to the superfilling of TSV.

Interaction effect of suppressor concentration and current density on the copper deposition rate in TSV filling process

Influence of Electroplating Current Density on Through Silicon Via Filling

Numerical Model with Competitively Adsorptive Mechanism for Copper Electrodeposition of TSV

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Collaborative Effect Between Additives and Current in TSV Via Filling Process

Effect of Cetyl-Trimethyl-ammonium-bromide (CTAB) and Bis (3-Sulfopropyl) Disulfide (SPS) on the Through-Silicon-via (TSV) Copper Filling

Numerical Simulation of the Tsv-Cu Filling by Electroplating Process with the Accelerator and Suppressor

Investigations of the electrochemical performance and filling effects of additives on electroplating process of TSV

Pure Bottom-up filling process for efficient TSV metallization

Effect of Chloride Concentration on Copper Deposition in Through Silicon Vias

FEA study on the TSV copper filling influenced by the additives and electroplating process

Effect of additives on copper electroplating profile for TSV filling

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Numerical Modeling And Experimental Verification Of Through Silicon Via (Tsv) Filling In Presence Of Additives

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Investigation of competitive adsorption between accelerator and suppressor in TSV copper electroplating

A Novel Model for Through-Silicon Via (TSV) Filling Process Simulation Considering Three Additives and Current Density Effect

Parameter Analysis on the Ultrasonic Tsv-Filling Process and Electrochemical Characters

Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution