Abstract:Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more direct method is to apply surface voltage to dielectric interfaces by direct contact or postprocess biasing; these methods could also be adapted for high throughput printing sequences. Dielectric hydrophobicity is an important chemical property determining the stability of the surface charges. Functional organic monolayers applied to dielectrics, using the surface attachment chemistry made available from "self-assembled" monolayer chemistry, provide local electric fields without any biasing process at all. To the extent that the monolayer molecules can be printed, these are also suitable for high throughput processes. Finally, we briefly consider V(T) control in the context of device integration and reliability, such as the role of contact resistance in affecting this parameter.

Mechanistic Analysis of Embedded Copper Oxide in Organic Thin-Film Transistors with Controllable Threshold Voltage

Onset Voltage Shift in the Organic Thin-Film Transistor with an Atomic-Layer-deposited Charge-Injection Interlayer

Observation of Large Threshold Voltage Shift Induced by Pre-applied Voltage to SiO2 Gate Dielectric in Organic Field-Effect Transistors

Threshold Voltage Control in Dual-Gate Organic Electrochemical Transistors

Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors

Tuning the Threshold Voltage of an Oxide Thin-Film Transistor by Electron Injection Control Using a p-n Semiconductor Heterojunction Structure

Dual In-Plane-Gate Oxide-Based Thin-Film Transistors with Tunable Threshold Voltage

Molecular layer modulation of two-dimensional organic ferroelectric transistors

Through thick and thin: tuning the threshold voltage in organic field-effect transistors

Improving the Performance of Organic Thin-Film Transistor with a Doped Interlayer

Modification of Indium Tin Oxide Electrodes by Fluorinated Silanes for Transparent Organic Thin-Film Transistors

Threshold Voltage Extraction Using Conductance–Voltage Method for Nano‐Organic/Oxide Thin‐Film Transistors: Comparative Study of P‐ and N‐Type Devices

Modulation of the Al/Cu2O Schottky Barrier Height for p-Type Oxide TFTs Using a Polyethylenimine Interlayer

Ultrahigh Mobility and Efficient Charge Injection in Monolayer Organic Thin-Film Transistors on Boron Nitride.

Modulating Contact Properties by Molecular Layers in Organic Thin‐film Transistors

Tuning Organic Electrochemical Transistor Threshold Voltage using Chemically Doped Polymer Gates

Improved Photostability of Organic Thin Film Transistors with Tantalum Oxide/Poly(4-Vinylphenol) Double Gate Insulators

Tuning the Threshold Voltage of Double-Gate Low-Voltage Transparent Oxide-Based Tfts by A Lateral In-Plane Gate

Impact of Gate Coupling and Misalignment on Performance of Double-gate Organic Thin Film Transistors

Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors

Organic Thin Film Transistors Incorporating Solution Processable Thieno[3,2-b]thiophene Thienoacenes