Abstract:Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating at sub-kelvin temperatures required to execute quantum logic with high-fidelity. This interconnect bottleneck is equally present in the device fabrication-measurement cycle, which requires high-throughput and cryogenic characterization to develop quantum processors. Here we multiplex quantum transport of two-dimensional electron gases at sub-kelvin temperatures. We use commercial off-the-shelf CMOS multiplexers to achieve an order of magnitude increase in the number of wires. Exploiting this technology we advance 300 mm epitaxial wafers manufactured in an industrial CMOS fab to a record electron mobility of (3.9$\pm$0.6)$\times$10$^5$ cm$^2$\slash Vs and percolation density of (6.9$\pm$0.4)$\times$10$^{10}$ cm$^{-2}$, representing a key step toward large silicon qubit arrays. We envision that the demonstration will inspire the development of cryogenic electronics for quantum information and because of the simplicity of assembly, low-cost, yet versatility, we foresee widespread use of similar cryo-CMOS circuits for high-throughput quantum measurements and control of quantum engineered systems.

Modelling and Kink Correction of Bulk CMOS at Liquid Helium Temperature

Modelling and kink correction of $0.18\,{{\bf \mu }}{m}$ 0.18 μ m bulk CMOS at liquid helium temperature

Cryogenic Characerization and Modeling of Standard CMOS down to Liquid Helium Temperature for Quantum Computing

Characterization and Modeling of 0.18μm Bulk CMOS Technology at Sub-Kelvin Temperature

Cryogenic Modeling of Standard CMOS for Quantum Computing

Characterization and Modeling of 0.18μm CMOS Technology at sub-Kelvin Temperature

MOSFET Characterization and Modeling at Cryogenic Temperatures

Characterization and Compact Modeling of Short Channel MOSFETs at Cryogenic Temperatures

Cryogenic Modeling of MOSFET Device Based on BSIM and EKV Models

Extending Standard BSIM-BULK Model to Cryogenic Temperatures

Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

Characterization and Modelling of Mosfet Operating at Cryogenic Temperature for Hybrid Superconductor-Cmos Circuits

Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing

Compact Modeling of Quantum Transport in 55-Nm MOSFETs at Cryogenic Temperatures

Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature

A Physics-Oriented Model of Cryogenic MOSFETs Including the Subthreshold Kink Effects

Method for Efficient Large-Scale Cryogenic Characterization of CMOS Technologies

Efficient system for bulk characterization of cryogenic CMOS components

Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures

A Universal Temperature-Dependent Carrier Backscattering Model for Low-Temperature High-Performance CMOS Applications

Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs