Abstract:Although the body diode of SiC MOSFET has excellent surge capability, the reliability issues about commercial SiC MOSFET under repetitive surge current stress of body diode haven't been studied thoroughly. In this work, repetitive surge current stress is applied to the body diode of commercial SiC trench MOSFET, and the surge tests are conducted under different gate biases and ambient temperatures. It is found that no bipolar degradation occurs in the body diode but degradation phenomena of gate oxide and package are observed in devices under tests (DUTs). At room temperature, the threshold voltage (VT8) related to gate oxide degradation degrades more seriously at a negative gate bias of -5V than at 0V. At 0V gate bias, gate oxide and package degenerate more severely at /25°C than at 25°C. The evolution of on-state resistance (R DSON ) during the tests is influenced by the competitive mechanism between gate oxide degradation and package degradation. As a result, gate oxide degradation causes R DSON to reduce while package degradation makes R DSON rise. Meanwhile, the competitive mechanism is deeply influenced by the gate bias voltage and ambient temperature. The failure analysis shows that all DUTs fail with gate and source terminal shorted, which is mainly attributed to high junction temperature.

Dynamic Characterization of 1.2 Kv SiC Power MOSFET Body Diode at Cryogenic and High Temperatures

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

Comparative Temperature Dependent Evaluation and Analysis of 1.2-Kv SiC Power Diodes for Extreme Temperature Applications

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Characterization of 1.2 Kv 4H-Sic Power Mosfets and Si Igbts at Cryogenic and High Temperatures

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Characterization of 4H-SiC Planar MOSFETs and Trench MOSFETs at Cryogenic and High Temperatures

Dynamic Performance Of 4h-Sic Power Mosfets And Si Igbts Over Wide Temperature Range

Temperature Dependence of 1.2kv 4H-Sic Schottky Barrier Diode for Wide Temperature Applications

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Investigation of Electrical Characteristics on SiC MOSFET and JBS-Integrated MOSFET at Cryogenic Temperatures

Understanding High Temperature Static and Dynamic Characteristics of 1.2 Kv SiC Power MOSFETs

Characteristics of SiC Power Diodes at Extreme Temperatures

Comprehensive Characterization of the 4H-Sic Planar and Trench Gate MOSFETs from Cryogenic to High Temperature

Investigation of Two High-Temperature Bipolar Phenomena and Characteristics of 1.2-Kv SiC Power Diodes for High-Temperature Applications

Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications

TCAD Modeling of Temperature-Dependent Reverse Recovery Characteristics of 1.2-Kv SiC MOSFETs’ Body Diode

Dispersion analysis of dynamic and static characteristic parameters of 1200V SiC MOSFET

Static and Dynamic Characteristics of SiC MOSFET under Extremely High Temperature