Abstract:Accurate switching loss prediction is crucial for studying the failure mechanisms of power modules at extremely high temperatures. However, the temperature range of existing loss models for SiC MOSFETs is below 175°C, which cannot fulfill the requirements of high-temperature applications. This study proposes an analytical switching loss model for SiC MOSFETs over an extremely wide temperature range of 25 to 475°C. First, the proposed device-level model improves accuracy by considering the temperature-dependent channel transfer and output characteristics, body diode forward characteristic, and focusing on the two main charge storage effects of the reverse recovery process. Importantly, new phenomena in device characteristics at high temperatures are considered, especially the sudden increase phenomenon in reverse recovery, thereby broadening the applicable temperature range of the model. Additionally, the proposed circuit-level model is based on the commonly used four-lead Kelvin source connection case in conventional hightemperature packages and includes almost all parasitic inductances and capacitances. In this study, a low-inductance doubleside embedded package structure with a temperature resistance of 550°C is used to develop a high-temperature double-pulse test platform to verify the accuracy of the model. Experimental results show that the average estimation error of the turn-on energy loss is less than 8% and the maximum estimation error of the total energy loss is less than 14%. The proposed model holds the potential to be a powerful tool for studying extremely hightemperature failure mechanisms of power modules and guides the design of high-temperature converters.

TCAD Modeling of Temperature-Dependent Reverse Recovery Characteristics of 1.2-Kv SiC MOSFETs’ Body Diode

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery over an Extremely Wide High-Temperature Range

Temperature Dependent Reverse Recovery Characterization of SiC MOSFETs Body Diode forSwitching Loss Estimation In a Half-Bridge

Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions

Dynamic Characterization of 1.2 Kv SiC Power MOSFET Body Diode at Cryogenic and High Temperatures

Modeling the Temperature-Dependence of Silicon Diode with Fermi-Dirac Statistics down to 50K

A Temperature-Dependent SiC MOSFET Modeling Method Based on MATLAB/Simulink

Investigation of Two High-Temperature Bipolar Phenomena and Characteristics of 1.2-Kv SiC Power Diodes for High-Temperature Applications

High Temperature Stability and the Performance Degradation of SiC MOSFETs

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Thermal Characterization of Silicon Carbide MOSFET Module Suitable for High-Temperature Computationally Efficient Thermal-Profile Prediction

Characterization of Electro-Thermal Coupling Behaviors and Safe Operating Area of SiC MOSFET Modules in Pulsed Power Applications

Electro-Thermal Coupling Characteristics and Modeling of SiC MOSFET Modules under High Pulse Current Conditions

Characteristics of SiC Power Diodes at Extreme Temperatures

A Temperature-Dependent Analytical Model of SiC MOSFET Short-Circuit Behavior Considering Parasitic Parameters

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Understanding High Temperature Static and Dynamic Characteristics of 1.2 Kv SiC Power MOSFETs

4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

Analysis on Reverse Recovery Characteristic of SiC MOSFET Intrinsic Diode

Degradation of 4H-Sic MOSFET Body Diode under Repetitive Surge Current Stress