Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

Electro-Thermal Coupling Characteristics and Modeling of SiC MOSFET Modules under High Pulse Current Conditions

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance

Thermal Characterization of Silicon Carbide MOSFET Module Suitable for High-Temperature Computationally Efficient Thermal-Profile Prediction

Electrical Performances and Physics Based Analysis of 10kv SiC Power MOSFETs at High Temperatures

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Analytical PSpice model for SiC MOSFET based high power modules

High-temperature Characteristics of SiC Module and 100 Kw SiC AC-DC Converter at a Junction Temperature of 180 °C

Understanding High Temperature Static and Dynamic Characteristics of 1.2 Kv SiC Power MOSFETs

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

Development of a 1200 V, 120 A SiC MOSFET module for high-temperature and high-frequency applications

A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

Modeling of SiC MOSFET with temperature dependent parameters and its applications

Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip

Structure and the Thermal Management of a 3-D Silicon Carbide MOSFET Module

High Current Gate Drive Circuit with High Temperature Potential for SiC MOSFET Module