Abstract:The interfacial tunable band alignment of heterostructures is coveted in device design and optimization of device performance. As an intentional approach, alloying allows band engineering and continuous band‐edge tunability for low‐dimensional semiconductors. Thus, combining the tunability of alloying with the band structure of a heterostructure is highly desirable for the improvement of device characteristics. In this work, the single‐step growth of alloy‐to‐alloy (MoS2(1‐x)Se2x/SnS2(1‐y)Se2y) 2D vertical heterostructures is demonstrated. Electron diffraction reveals the well‐aligned heteroepitaxial relationship for the heterostructure, and a near‐atomically sharp and defect‐free boundary along the interface is observed. The nearly intrinsic van der Waals (vdW) interface enables measurement of the intrinsic behaviors of the heterostructures. The optimized type‐II band alignment for the MoS2(1‐x)Se2x/SnS2(1‐y)Se2y heterostructure, along with the large band offset and effective charge transfer, is confirmed through quenched PL spectroscopy combined with density functional theory calculations. Devices based on completely stacked heterostructures show one or two orders enhanced electron mobility and rectification ratio than those of the constituent materials. The realization of device‐quality alloy‐to‐alloy heterostructures provides a new material platform for precisely tuning band alignment and optimizing device applications.

Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces

Modulation of Band Offset in Sputtering-Derived MoS2/HfO2 Heterojunction by Gd Incorporation

Investigation of Band Alignment for Hybrid 2D-Mos2/3d-β-ga2o3 Heterojunctions with Nitridation

Modification of band offsets of InGaZnO4/Si heterojunction through nitrogenation treatment

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Band Alignment of Atomic Layer Deposited MoS2/(HfO2) X (al2o3)1−x Heterojunctions for Device Applications

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Band alignment of monolayer MoS2/4H-SiC heterojunction via first-principles calculations and x-ray photoelectron spectroscopy

Modulation of the Band Offsets Between La2Hf2O7 and Fully Depleted SiGe on Insulator by NH3 Treatment

Band Alignment of ZnO/CdSe Quantum Dots Heterojunction Determined by Ultraviolet Photoelectron Spectroscopy Using Synchrotron Radiation

Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns.

Band Alignment and Interfacial Structure of ZnO/Si Heterojunction with Al2O3 and HfO2 As Interlayers

Band alignment of wide bandgap NiO/MoO3 and NiO/WO3 p-n heterojunctions studied by high-resolution X-ray photoelectron spectroscopy

Tunable electronic properties and band alignments of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO van der Waals heterostructures

Tuning Electronic and Optical Properties of Monolayer MoS2 by Transition Metal and Nitrogen Co-Doping

Direct Synthesis and Enhanced Rectification of Alloy‐to‐Alloy 2D Type‐II MoS 2(1‐ x ) Se 2 x /SnS 2(1‐ y ) Se 2 y Heterostructures

Atomically Resolved Observation of Continuous Interfaces Between an As-Grown MoS2 Monolayer and a WS2/MoS2 Heterobilayer on SiO2

Orientation Dependent Band Alignment for P-Nio/N-Zno Heterojunctions

Investigation of Crystalline and Band Alignment Properties of NiO/GaN and Ni 0.5 Co 0.5 O/GaN heterojunctions using Synchrotron Radiation based Techniques

Surface Termination and Band Alignment in 2D Heterostructures

Effect of Band Bending in Photoactive MOF-Based Heterojunctions