Investigation of Crystalline and Band Alignment Properties of NiO/GaN and Ni 0.5 Co 0.5 O/GaN heterojunctions using Synchrotron Radiation based Techniques

KIRAN BARAIK,Rijul Roychowdhury,Aniruddha Bose,Chandrachur Mukherjee,Tapas Ganguli,Shreyashkar Dev Singh

DOI: https://doi.org/10.1088/1402-4896/ad4524

2024-04-30

Physica Scripta

Abstract:Epitaxial layers of NiO and Ni 0.5 Co 0.5 O have been deposited on GaN templates using RF magnetron sputtering deposition technique. The epitaxial relationship in out-of-plane and in-plane directions for NiO and Ni 0.5 Co 0.5 O layers with respect to GaN is [111] (NiO(Ni 0.5 Co 0.5 O) ∥ [0001] GaN and [-110] (NiO(Ni 0.5 Co 0.5 O) ∥[-1 2-1 0] GaN , respectively. The epi-layers are found to have two triangular domain structures oriented along [111] direction with an in-plane rotation of 60 o with respect to each other. Photoelectron spectroscopy (PES) has been used to determine the valence band offset (∆E V ) and the band alignment at the heterojunctions (HJs). The ∆E V at NiO/GaN and Ni 0.5 Co 0.5 O/GaN HJs are 1.2 ± 0.2 eV and 1.8 ± 0.2 eV, respectively. The conduction band offsets (∆E C ) have also been estimated using the determined values of optical band gap (NiO: Eg = ~ 3.5 eV; Ni 0.5 Co 0.5 O: Eg = ~ 3.3 eV) from optical transmission measurements. The values of ∆E C are found to be 1.5 ± 0.2 eV and 1.9 ± 0.2 eV at NiO/GaN and Ni 0.5 Co 0.5 O/GaN HJs, respectively. A type-II band alignment is observed at both the HJs. Higher values of valence band and conduction band offsets are observed at Ni 0.5 Co 0.5 O/GaN HJ in comparison to NiO/GaN. These, experimentally determined values of band offsets can be used to design wide band gap HJ based devices like photodetectors, where higher values of band off-set at the Ni 0.5 Co 0.5 O/GaN HJ can be utilized to confine the carriers.

physics, multidisciplinary