Abstract:The assembly of van der Waals (vdw) heterostructure with easily regulated electronic properties provides a new way for the expansion of two-dimentional (2D) materials and promotes the development of optoelectronics, sensors, switching devices and other fields. In this work, a systematic investigation of the electronic properties of MoGe2N4/SiC heterostructures using density functional theory (DFT) has been conducted, along with the modulation of electronic properties by vertical strain and the potential application prospects in optoelectronic devices. The results show that MoGe2N4/SiC heterostructure has excellent dynamic and thermal stability and belongs to type-II band alignment semiconductors. This is extremely beneficial for the separation of photo-generating electron-hole pairs, so it has important significance for the development of photovoltaic materials. In addition, under the control of vertical strain, the semiconductor-metal transition occurs in the MoGe2N4/SiC heterostructure when the compressive strain reaches 6%. In the case of compressive strain less than 6% and tensile strain, the MoGe2N4/SiC heterostructure maintains the type-II band alignment semiconductor characteristics. Meanwhile, we find that the MoGe2N4/SiC heterostructure has optical absorption coefficients of up to 105 in the visible and ultraviolet light ranges, which can improve the absorption coefficients of the MoGe2N4 and SiC monolayer in some visible light regions. Finally, the optical conductivity of the MoGe2N4/SiC heterostructure exhibits significant anisotropy, with the armchair direction displaying higher conductivity within the orange light range. In conclusion, the formation of vdW heterostructure by vertically stacking MoGe2N4 and SiC monolayers can effectively improve their electronic and optical properties, which provides a valuable reference for the future development of electronic devices and photovoltaic materials.

Optical characterizations of GaN/MoS2 van der Waals heterojunctions with different band alignments

A van der Waals pn heterojunction with organic/inorganic semiconductors

Interface Properties of MoS2 van der Waals Heterojunctions with GaN

Tunable electronic properties and optoelectronic characteristics of MoGe2N4 /SiC van der Waals heterostructure

Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS2 Layers by Plasma-Assisted Molecular Beam Epitaxy

Tunable electronic properties and band alignments of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO van der Waals heterostructures

Investigation of a nanostructured GaP/MoS2 p-n heterojunction photodiode

Absorption and emission modulation in MoS2-GaN (0001) heterostructure by interface phonon-exciton coupling

Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)

Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN

Excitonic interplay between surface polar III-nitride quantum wells and MoS$_2$ monolayer

Atomic resolution interface structure and vertical current injection in highly uniform $MoS_{2}$ heterojunctions with bulk GaN

Theoretical prediction of the electronic structure, optical properties and contact characteristics of type-I MoS2/MoGe2N4 heterostructure towards optoelectronic devices

Investigation of Band Alignment for Hybrid 2D-Mos2/3d-β-ga2o3 Heterojunctions with Nitridation

Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer

Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity

Doping and Strain Modulation of the Electronic, Optical and Photocatalytic Properties of the GaN/C2N Heterostructure

Influence of the Device Structure on the Electrical and Photodetector Properties of N-Mos2/p-gase Heterojunction Optoelectronic Devices

Large-Area Monolayer MoS 2 Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices

Doping and strain modulation of the electronic, optical and photocatalytic properties of the GaN/C2N heterostructure.

Large-Area Monolayer MoS<sub>2</sub> Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices