Excitonic interplay between surface polar III-nitride quantum wells and MoS$_2$ monolayer

Danxuan Chen,Jin Jiang,Thomas F. K. Weatherley,Jean-François Carlin,Mitali Banerjee,Nicolas Grandjean
2023-09-05
Abstract:III-nitride wide bandgap semiconductors exhibit large exciton binding energies, preserving strong excitonic effects at room temperature. On the other hand, semiconducting two-dimensional (2D) materials, including MoS$_2$, also exhibit strong excitonic effects, attributed to enhanced Coulomb interactions. This study investigates excitonic interactions between surface GaN quantum well (QW) and 2D MoS$_2$ in van der Waals heterostructures by varying the spacing between these two excitonic systems. Optical property investigation first demonstrates the effective passivation of defect states at the GaN surface through MoS$_2$ coating. Furthermore, a strong interplay is observed between MoS$_2$ monolayers and GaN QW excitonic transitions. This highlights the interest of the 2D material/III-nitride QW system to study near-field interactions, such as Förster resonance energy transfer, which could open up novel optoelectronic devices based on such hybrid excitonic structures.
Mesoscale and Nanoscale Physics,Applied Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explore the exciton interaction between surface - polarized gallium nitride (GaN) quantum wells (QWs) and monolayer molybdenum disulfide (MoS₂) at different spacings. Specifically, the research explored the characteristics of the near - field interaction between them, especially the Förster Resonance Energy Transfer (FRET) phenomenon, by changing the spacing of these two exciton systems. This not only helps to understand the basic physical mechanisms in these hybrid exciton structures, but also may provide theoretical basis and technical support for the development of new optoelectronic devices based on such structures. The key to the paper lies in using different experimental techniques, such as Cathodoluminescence (CL) measurement, to observe and analyze the changes in this interaction. The research found that when the MoS₂ coating is covered on the GaN surface, it can effectively passivate the defect states on the GaN surface and reduce the influence of non - radiative recombination centers, thereby enhancing the luminous efficiency of the GaN QW. In addition, with the change of spacing, especially in the case of a spacing of 15 nanometers, a strong exciton interaction between the GaN QW and the MoS₂ monolayer was observed, indicating that there is an effective energy transfer process between the two, that is, the FRET effect. This finding is of great significance for exploring the near - field interaction between two - dimensional materials and group - III nitride quantum well systems, and may promote the development of new high - efficiency optoelectronic devices.