Abstract:Electric-field-induced resistance switching (RS) phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including binary transition metal oxides, perovskite oxides, chalcogenides, carbon- and silicon-based materials, as well as organic materials. RS phenomena can be used to store information and offer an attractive performance, which encompasses fast switching speeds, high scalability, and the desirable compatibility with Si-based complementary-metal-oxide-semiconductor fabrication. This is promising for nonvolatile memory technology, i.e. resistance random access memory (RRAM). However, a comprehensive understanding of the underlying mechanism is still lacking. This impedes a faster product development as well as an accurate assessment of the device performance potential. Generally speaking, RS occurs not in the entire dielectric but only a small, confined region, which results from the local variation of conductivity in dielectrics. In this review, we focus on the RS in oxides with such an inhomogeneous conductivity. According to the origin of the conductivity inhomogeneity, the RS phenomena and their working mechanism are reviewed by dividing them into two aspects: interface RS, based on the change of contact resistance at metal/oxide interface due to the change of Schottky barrier and interface chemical layer, and bulk RS, realized by the formation, connection, and disconnection of conductive channels in the oxides. Finally the current challenges of RS investigation and the potential improvement of the RS performance for the nonvolatile memories are discussed.

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Resistive switching model for Electrolyte-Oxide-Semiconductor (EOS) structure

Basic properties of electrolyte-oxide-semiconductor structures with applications in biochemical sensing

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Oxygen-ion-migration-modulated Bipolar Resistive Switching and Complementary Resistive Switching in Tungsten/indium Tin Oxide/gold Memory Device

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

A Study of Copper Oxide Based Resistive Switching Memory by Conductive Atom Force Microscope

The Unveiling Switching Mechanism of Oxide Electrolyte Based ReRAM

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts.

Mechanism for bipolar resistive switching in transition metal oxides

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

Bipolar Resistive Switching in the Ag/Sb 2 Te 3 /Pt Heterojunction

Bipolar Resistive Switching in BiFe 0.95 Zn 0.05 O 3 Films

Resistance switching in oxides with inhomogeneous conductivity

Forming-Free One-Selector/One-Resistor Characteristics of Oxygen-Rich ITO Based Transparent Resistive Switching Memory via Defect Engineering Using the Reactive Sputtering Process

Resistive Switching in Aqueous Nanopores by Shock Electrodeposition

Scalable $\rm Al_2O_3-TiO_2$ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Bipolar Switching Analysis and Negative Resistance Phenomenon in TiOx-based Devices