Abstract:In this research, a passivated methodology was proposed for achieving good electrical characteristics for back-channel-etch (BCE) typed amorphous Si-Sn-O thin film transistors (a-STO TFTs). This methodology implied that the thermal annealing (i.e., pre-annealing) should be carried out before deposition of a SiOx passivation layer. The pre-annealing played an important role in affecting device performance, which did get rid of the contamination of the lithography process. Simultaneously, the acceptor-like sub-gap density of states (DOS) of devices was extracted for further understanding the reason for improving device performance. It found that the SiOx layer could reduce DOS of the device and successfully protect the device from surroundings. Finally, a-STO TFT applied with this passivated methodology could possess good electrical properties including a saturation mobility of 4.2 ± 0.2 cm2/V s, a low threshold voltage of 0.00 V, a large on/off current ratio of 6.94 × 108, and a steep subthreshold swing of 0.23 V/decade. The threshold voltage slightly shifted under bias stresses and recovered itself to its initial state without any annealing procedure, which was attributed to the charge trapping in the bulk dielectric layers or interface. The results of this study indicate that a-STO TFT could be a robust candidate for realizing a large-size and high-resolution display.

A Novel Nondestructive Testing Method for Amorphous Si–Sn–O Films

Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiOx Passivation Layer.

A Study of Contact Properties Between Molybdenum and Amorphous Silicon Tin Oxide Thin Film Transistors

Flexible Thin‐film Transistors Application of Amorphous Tin Oxide‐based Semiconductors

High-Performance Back-Channel-Etched Thin-Film Transistors With Amorphous Si-Incorporated Sno2 Active Layer

Magnetron-Sputtered SnO Thin Films for p-Type and Ambipolar TFT Applications

Effect of Source/Drain Electrodes on the Electrical Properties of Silicon–Tin Oxide Thin-Film Transistors

Influence of Post-Deposition Annealing on the Novel Alloyed SnSxO1-x Semiconductor in P-Type Thin-Film Transistors

Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate.

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped Sno2 Thin-Film

Amorphous P-Type CuNiSnO Thin-Film Transistors Processed at Low Temperatures

Characterization Of Amorphous Si-Zn-Sn-O Thin Films And Applications In Thin-Film Transistors

Origin of Bias-Stress and Illumination Instability in Low-Cost, Wide-Bandgap Amorphous Si-doped Tin Oxide-Based Thin-Film Transistors

The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors

35.3: Self‐formed Nano‐scale Metal‐oxide Contact Interlayer for Amorphous Silicon Tin Oxide TFTs

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Effect of deep UV laser treatment on silicon‐doped Tin oxide thin film

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

Controlled 2D growth approach via atomic layer deposition for improved stability and performance in flexible SnO thin-film transistors

Evaluation of Nd–Al Doped Indium-Zinc Oxide Thin-Film Transistors by a Μ-Pcd Method