The Behavior of Grain Boundary Defects and Impurities Related to PTCR Effects in Semiconducting BaTiO3-b Ased Ceramics

QI Jian-quan,GUI Zhi-lun,CHEN Wan-ping,LI Long-tu
DOI: https://doi.org/10.3969/j.issn.1004-2474.2000.02.016
2000-01-01
Abstract:In BaTiO3 based ceramics sintered in oxidizing atmosphere, oxygen is rich at grain boundary, but is lack in inner grain for the release of oxygen at the high temperature. Defects and impurities may oxidize to higher valence in grain boundary and generate new ones which can not exist in grain bulk. They will get to lower valence which is more stabe during ferroelectric phase transition, and produce electronic trap. These traps enhance materials' resistivity rapidly, and cause the PTCR effects.
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