Improvement of the PTCR Effect in Ba1‐xSrxTiO3 Semiconducting Ceramics by Doping of Bi2O3 Vapor During Sintering

JQ Qi,WP Chen,YJ Wu,LT Li
DOI: https://doi.org/10.1111/j.1151-2916.1998.tb02355.x
IF: 4.186
1998-01-01
Journal of the American Ceramic Society
Abstract:The influence on the PTCR effect in Ba1‐xSrxTiO3 semiconducting ceramics by doping of Bi2O3 vapor during its sintering is reported in this paper. Comparative experiments showed that the grains of Bi2O3‐vapor‐doped samples were much smaller than those of undoped ones; both the magnitude of the resistance jump and the positive temperature coefficient of resistance were considerably increased. Very dense samples with 8 orders of magnitude of resistance jump were obtained. The mechanism for the effect of Bi2O3 vapor doping is also discussed.
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